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PDF HMC659LC5 Data sheet ( Hoja de datos )
| Número de pieza | HMC659LC5 | |
| Descripción | GaAs PHEMT MMIC POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC659LC5 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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v04.0614
Typical Applications
The HMC659LC5 wideband PA is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
HMC659LC5
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
Features
P1dB Output Power: +27.5 dBm
Gain: 19 dB
Output IP3: +35 dBm
Supply Voltage: +8V @ 300 mA
50 Ohm Matched Input/Output
32 Lead Ceramic 5 x 5 mm SMT Package: 25 mm2
Functional Diagram
General Description
The HMC659LC5 is a GaAs MMIC pHEMT
Distributed Power Amplifier which is housed in a
leadless 5 x 5 mm RoHS compliant ceramic SMT
package operating between DC and 15 GHz. The
amplifier provides 19 dB of gain, +35 dBm output IP3
and +27.5 dBm of output power at 1 dB gain
compression, while requiring 300mA from a +8V
supply. Gain flatness is excellent at ±1.4 dB from
DC - 15 GHz making the HMC659LC5 ideal for EW,
ECM, Radar and test equipment applications. The
HMC659LC5 amplifier I/Os are internally matched
to 50 Ohms with no external components. The
HMC659LC5 is compatible with high volume surface
mount manufacturing techniques.
Electrical Specifications, TA = +25 °C, Vdd= +8V, Vgg2= +3V, Idd= 300 mA*
Parameter
Min. Typ.
Frequency Range
DC - 6
Gain
16 19
Gain Flatness
± 0.7
Gain Variation Over Temperature
0.015
Input Return Loss
20
Output Return Loss
19
Output Power for 1 dB Compression (P1dB)
23.5
26.5
Saturated Output Power (Psat)
28.0
Output Third Order Intercept (IP3)
35
Noise Figure
3.0
Supply Current
(Idd) (Vdd= 8V, Vgg1= -0.8V Typ.)
300
*Adjust Vgg1 between -2 to 0V to achieve Idd= 300 mA typical.
Max.
Min.
15
24.5
Typ.
6 - 11
18
± 0.4
0.019
18
20
27.5
28.5
32
2.5
300
Max.
Min.
14
23.5
Typ.
11 - 15
17
± 0.7
0.022
17
15
26.5
27.5
29
3.5
300
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
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1 page  
v04.0614
Outline Drawing
HMC659LC5
GaAs PHEMT MMIC
POWER AMPLIFIER, DC - 15 GHz
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES
GOLD OVER 50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. C HARACTERS TO BE LASER MARKED WITH .018” MIN to
.030” MAX HEIGHT REQUIREMENTS. UTILIZE MAXIMUM
CHARACTER HEIGHT BASED ON LID DIMENSIONS AND
BEST FIT. LOCATE APPROX. AS SHOWN.
6. PACKAGE WARP SHALL NOT EXCEED 0.05 mm DATUM -C-
7. A LL GROUND LEADS AND GROUND PADDLE MUST BE
SOLDERED TO PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC659LC5
Alumina, White
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
Gold over Nickel
MSL Rating
MSL3 [1]
Package Marking [2]
H659
XXXX
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HMC659LC5.PDF ] | |
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