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PDF HMC7229LS6 Data sheet ( Hoja de datos )
| Número de pieza | HMC7229LS6 | |
| Descripción | Power Amplifier | |
| Fabricantes | Analog Devices | |
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Data Sheet
GaAs, pHEMT, MMIC, 1 W, Power Amplifier
with Power Detector, 37 GHz to 40 GHz
HMC7229LS6
FEATURES
32 dBm typical saturated output power (PSAT) at 18% power
added efficiency (PAE) at 39 GHz
P1dB compression output power: 31.5 dBm typical
High output third-order intercept (IP3): 40 dBm typical
High gain: 24 dB typical
50 Ω matched input/output
Ceramic, 6 mm × 6 mm, high frequency, air cavity package
APPLICATIONS
Point to point radios
Point to multipoint radios
Very small aperture terminal (VSAT) and satellite
communications (SATCOM)
FUNCTIONAL BLOCK DIAGRAM
HMC7229LS6
VDD1 1
VDD3 2
VGG1 3
11 VDD2
10 VDD4
9 VGG2
GENERAL DESCRIPTION
The HMC7229LS6 is a four stage, gallium arsenide (GaAs),
pseudomorphic high electron mobility transfer (pHEMT),
monolithic microwave integrated circuit (MMIC), 1 W power
amplifier, with an integrated temperature compensated on-chip
power detector that operates between 37 GHz to 40 GHz. The
HMC7229LS6 provides 24 dB of gain and 32 dBm of saturated
output power at 18% PAE at 39 GHz from a 6 V supply. With an
excellent IP3 of 40 dBm, the HMC7229LS6 is ideal for linear
PACKAGE
BASE
GND
NOTES
1. NIC = NO INTERNAL CONNECTION. NOTE THAT DATA
SHOWN HEREIN WAS MEASURED WITH THESE PINS
EXTERNALLY CONNECTED TO RF/DC GROUND.
Figure 1.
applications such as high capacity, point to point or multipoint
radios or VSAT/SATCOM applications demanding 32 dBm of
efficient saturated output power. The radio frequency (RF)
input/outputs are internally matched and dc blocked for ease of
integration into higher level assemblies. The HMC7229LS6 is
housed in a ceramic, 6 mm × 6 mm, high frequency, air cavity
package that exhibits low thermal resistance and is compatible
with surface-mount manufacturing techniques.
Rev. B
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibilityisassumedbyAnalogDevices for itsuse,nor foranyinfringementsofpatentsor other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
HMC7229LS6
ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter
Drain Bias Voltage (VDDx)
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation, PDISS (T =
85°C, Derates 95 mW/°C Above 85°C)
Thermal Resistance (Channel to Ground
Paddle)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
Rating
7V
21 dBm
175°C
9.0 W
10°C/W
−65°C to +150°C
−40°C to +85°C
Class 0, passed 150 V
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
Rev. B | Page 4 of 15
5 Page 
HMC7229LS6
–40
–50
–60
+85°C
+25°C
–40°C
–70
–80
37
38 39
FREQUENCY (GHz)
40
Figure 28. Reverse Isolation vs. Frequency for Various Temperatures
35
P1dB
30 GAIN
PSAT
25
20
5.0
5.5
VDD (V)
6.0
Figure 29. Gain, P1dB, and PSAT vs. Supply Voltage (VDD) at 38.5 GHz
35
P1dB
30 GAIN
PSAT
25
20
800
900
1000
1100
IDD (mA)
1200
Figure 30. Gain, P1dB, and PSAT vs. Supply Current (IDD) at 38.5 GHz
Data Sheet
10
9 40GHz
39GHz
38GHz
37GHz
8
7
6
5
–15 –12 –9 –6 –3 0 3 6 9
INPUT POWER (dBm)
Figure 31. Power Dissipation vs. Input Power
12
10
1
0.1
0.01
0.001
+85°C
+25°C
–40°C
0.0001
–20
–10 0
10 20
OUTPUT POWER (dBm)
30
Figure 32. Detector Voltage (VREF − VDET) vs. Output Power for Various
Temperatures at 38.5 GHz
Rev. B | Page 10 of 15
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet HMC7229LS6.PDF ] | |
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