HMC413QS16GE Datasheet PDF - Analog Devices
| Part Number | HMC413QS16GE | |
| Description | GaAs InGaP HBT MMIC POWER AMPLIFIER | |
| Manufacturers | Analog Devices | |
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HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
11
Typical Applications
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
• Cellular / PCS / 3G
• Portable & Infrastructure
• Wireless Local Loop
Functional Diagram
Features
Gain: 23 dB
Saturated Power: +29.5 dBm
42% PAE
Supply Voltage: +2.75V to +5V
Power Down Capability
Low External Part Count
Included in the HMC-DK002 Designer’s Kit
General Description
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Tran-
sistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal perfor-
mance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of satu-
rated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
11 - 50
Electrical Specifications, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Parameter
Frequency
Min.
Vs= 3.6V
Typ.
Max.
Min.
Vs= 5V
Typ.
Gain
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
18
19
18
17
21
22
21
20
19 22
20 23
19 22
18 21
Gain Variation Over Temperature
1.6 - 2.2 GHz
0.025
0.035
0.025
Input Return Loss
1.6 - 2.2 GHz
10
10
Output Return Loss
1.6 - 2.2 GHz
8
9
Output Power for 1 dB Compression (P1dB)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
20
21
23
24
23 26
24 27
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
25.5
26.5
28.5
29.5
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
32
33
32
35
36
35
36 39
37 40
36 39
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
Supply Current (Icq)
Vpd= 0V/3.6V
0.002/220
0.002/270
Control Current (Ipd)
Vpd= 3.6V
77
Switching Speed
tON, tOFF
80 80
Max.
0.035
Units
dB
dB
dB
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
mA
mA
ns
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v04.0505
HMC413QS16G / 413QS16GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Reverse Isolation
vs. Temperature, Vs= 3.6V
0
-10
-20 +25 C
+85 C
-30 -40 C
-40
-50
-60
-70
1.3 1.5 1.7 1.9 2.1 2.3 2.5
FREQUENCY (GHz)
Power Down Isolation, Vs= 3.6V
0
-10
-20
-30
-40
-50
-60
1.3 1.5 1.7 1.9 2.1 2.3
FREQUENCY (GHz)
2.5
11
Noise Figure vs. Temperature, Vs= 3.6V
10
8
6
4
2
0
1.5
+25 C
+85 C
-40 C
1.7 1.9 2.1 2.3
FREQUENCY (GHz)
2.5
Gain & Power vs.
Supply Voltage @ 1.9 GHz
30 34
29 32
28 Gain
30
27 28
26 26
25 24
24 22
23 20
22
18
P1dB
21 Psat 16
20 14
2.75 3.25 3.75 4.25 4.75 5.25
Vcc SUPPLY VOLTAGE (Vdc)
Noise Figure vs. Temperature, Vs= 5V
10
8
6
4
2
0
1.5
+25 C
+85 C
-40 C
1.7 1.9 2.1 2.3
FREQUENCY (GHz)
2.5
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
28 330
25 Icq 270
22 210
19 150
16
Gain
P1dB
90
Psat
13 30
1.5 1.75 2 2.25 2.5 2.75 3 3.25 3.5
Vpd (Vdc)
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11 - 53
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