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Analog Devices - GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER

Numéro de référence HMC408LP3E
Description GaAs InGaP HBT MMIC 1 WATT POWER AMPLIFIER
Fabricant Analog Devices 
Logo Analog Devices 





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HMC408LP3E fiche technique
v03.0705
11
Typical Applications
The HMC408LP3 / HMC408LP3E is ideal for:
• 802.11a & HiperLAN WLAN
• UNII & Point-to-Point / Multi-Point Radios
• Access Point Radios
Functional Diagram
HMC408LP3 / 408LP3E
GaAs InGaP HBT MMIC 1 WATT
POWER AMPLIFIER, 5.1 - 5.9 GHz
Features
Gain: 20 dB
Saturated Power: +32.5 dBm @ 27% PAE
Single Supply Voltage: +5V
Power Down Capability
3x3 mm Leadless SMT Package
General Description
The HMC408LP3 & HMC408LP3E are 5.1 - 5.9 GHz
high efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) Power Amplifier MMICs which offer
+30 dBm P1dB. The amplifier provides 20 dB of gain,
+32.5 dBm of saturated power, and 27% PAE from a
+5V supply voltage. The input is internally matched
to 50 Ohms while the output requires a minimum of
external components. Vpd can be used for full power
down or RF output power/current control. The amplifier
is packaged in a low cost, 3x3 mm leadless surface
mount package with an exposed base for improved
RF and thermal performance.
11 - 34
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss*
Output Power for 1 dB Compression
(P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Harmonics, Pout= 30 dBm, F= 5.8 GHz
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Min. Typ. Max.
5.7 - 5.9
17 20
0.045
0.055
8
14
Icq= 750 mA
Icq= 500 mA
27
30
27
32.5
40 43
2 fo -50
3 fo -90
6
Vpd= 0V/5V
0.002 / 750
Vpd= 5V
14
tOn, tOff
50
* Output match optimized for 5.7 - 5.9 GHz operation. See Application Circuit herein.
Min.
17
24
36
Typ.
5.1 - 5.9
20
0.045
8
6
27
23
31
39
-50
-90
6
0.002 / 750
14
50
Max.
0.055
Units
GHz
dB
dB/°C
dB
dB
dBm
dBm
dBm
dBc
dBc
dB
mA
mA
ns
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