|
|
PDF HMC455LP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC455LP3E | |
| Descripción | InGaP HBT 1/2 Watt High IP3 AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HMC455LP3E (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
v02.0605
HMC455LP3 / 455LP3E
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
11
Typical Applications
This amplifier is ideal for high linearity applications:
• Multi-Carrier Systems
• GSM, GPRS & EDGE
• CDMA & WCDMA
• PHS
Functional Diagram
Features
Output IP3: +42 dBm
Gain: 13 dB
56% PAE @ +28 dBm Pout
+19 dBm W-CDMA Channel Power @ -45 dBc ACP
3x3 mm QFN SMT Package
General Description
The HMC455LP3 & HMC455LP3E are high output
IP3 GaAs InGaP Heterojunction Bipolar Transistor
(HBT) ½ watt MMIC amplifiers operating between 1.7
and 2.5 GHz. Utilizing a minimum number of external
components the amplifier provides 13 dB of gain and
+28 dBm of saturated power at 56% PAE from a single
+5 Vdc supply voltage. The high output IP3 of +42
dBm coupled with the low VSWR of 1.4:1 make the
HMC455LP3 & HMC455LP3E ideal driver amplifiers for
PCS/3G wireless infrastructures. A low cost, leadless
3x3 mm QFN surface mount package (LP3) houses
the linear amplifier. The LP3 provides an exposed
base for excellent RF and thermal performance.
Electrical Specifications, TA = +25° C, Vs= +5V
Parameter
Frequency Range
Gain
Min.
11.5
Typ. Max.
1.7 - 1.9
13.5
Min.
10.5
Typ.
1.9 - 2.2
13
Max.
Min.
9
Typ. Max.
2.2 - 2.5
11.5
Gain Variation Over Temperature
0.012 0.02
0.012 0.02
0.012 0.02
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
13
10
24 27
28.5
37 40
7
150
24.5
39
15
18
27.5
28
42
6
150
10
15
23 26
27
37 40
6
150
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
mA
11 - 234
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesFuiysdmtthoeim2ebarerdtyp0dmlbipActyaranAayrAtadiiorlnlcoeenpamgseluoohalDrg,trakeofDrsdvtoheiamRceevrereicwilsotetisihvssaieuseefsdopbeurrr.neo,iydtSlpiseC,epevurreaetshcyadeinnfo,eiycftndoaltophmtriaebotftienoerossrnraeftasscopnOoupcyrbrelujiarpdcernadatcfic,rtvtteieeentenMogaotrecnwromAhdiOgnaerehnrndrtne0gsstls.eie-a1oolbwfr8iflAnsiept2hn.a,eoat4HuelpotonagwntlsoetPDeotvieawcrheveorsio,.ctwheeNnnesoorw.ec.:ohFOPA9niohpnt7troptea8inlptiTcece-rei:2atc.c7tc5eHih8o,on01niodtm--S3tle3oi2ultgi3e9vpye-4p4rWMoy37r,a0tiy:ac0F,Pnr•Pdhao.OoOxwtnor.:deaB:9epvo1rl7aex-o8c8n9e0C-l1i02n0oo-e56rArd,a0NpeNtA-rowos3Lr:rwOw3aAwG7otnio.o3-aadDlnno,ag:MloADge.0cv2oic0me6s2,-9In10c.6,
1 page  
v02.0605
ACPR vs. Supply Voltage @ 1.96 GHz
CDMA 2000, 9 Channels Forward
-40
-45 CDMA2000 Rev. 8
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-50
-55
4.5V
5V
5.5V
-60
Source ACPR
-65
5 7 9 11 13 15 17 19 21
Channel Output Power (dBm)
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
RF Input Power (RFIN)(Vs = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 16 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+6.0 Vdc
+25 dBm
150 °C
1.04 W
63 °C/W
-65 to +150 °C
-40 to +85 °C
HMC455LP3 / 455LP3E
InGaP HBT ½ Watt High IP3
AMPLIFIER, 1.7 - 2.5 GHz
ACPR vs. Supply Voltage @ 2.14 GHz
W-CDMA, 64 DPCH
-30
-35
WCDMA
-40 Frequency : 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
-45
-50
4.5V
5V
5.5V
-55
-60
Source ACPR
-65
5 7 9 11 13 15 17 19 21
Channel Output Power (dBm)
11
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Application Circuit
TL1 TL2
Impedance
50 Ohm 50 Ohm
Physical Length
0.33”
0.18”
Electrical Length
34° 19°
PCB Material: 10 mil Rogers 4350, Er = 3.48
TL3
50 Ohm
0.13”
13.5°
TL4
50 Ohm
0.04”
4°
Recommended Component Values
L1 8.2 nH
C1 2.2 µF
C2, C3
3.0 pF
C4 0.9 pF
C5 100 pF
Data shown is tuned for 1.85 - 2.2 GHz, contact HMC
Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits.
IrrlTiniecgrfaseohpdntrseomsemnoasfatiisibtrohkingislrirtdayafunnpirsdtnaeairdrstesihegsbesFuiysdmtthoeimebar2erdtypd0mlbipActyaranayArAtadiiorlncoeelnapmgseluooahlDrg,trkeofaDrsdvtoheiamceeRvrereicwilstoetisihvssieuaseefsopdbeurrr.neoiy,dtSlpise,epeCvurreaetscyahdeinnfo,ieycftndoatoplhtmriaebotftienoerossrnraetafsscpnOooupcyrbelurjiarpcerndadatcficrtvtt,eieeentenogMaotrecnwromhdiOAgnaerehnrndrtnegss0tls.eie-ao1olbwfrif8lAnsiepthn.2a,eoatHue4lpotonagwntlsPoetDeotviehawcreveorosi,.ctwheeNnnesoorw.ec:.ohFOPA9niohp7nttroptea8inlptiTc-ecere2i:atc.c75tceHih8o0,on1niodt-mS3tl3eoi2ult3gie9vpy4e-p4rWM3oy7r,a0tiy:ac0F,Pnr•Padho.OoxOwtn:or.deaB9:epvo71rlaex-o88cn9e0-Cl12i0n0oo-5e6rArd0,aNpeNt-Arow3osLr:r3wOwaA7wGotni3o.o-aadDlnno,ag:MloADge.0cv2oic0me6s2,-9In10c.6,
11 - 237
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC455LP3E.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC455LP3 | InGaP HBT 1/2 Watt High IP3 AMPLIFIER |  Hittite Microwave Corporation |
| HMC455LP3E | InGaP HBT 1/2 Watt High IP3 AMPLIFIER | Analog Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |