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Número de pieza HMC1087F10
Descripción 8 WATT Flange Mount GaN MMIC POWER AMPLIFIER
Fabricantes Analog Devices 
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v03.1014
Typical Applications
The HMC1087F10 is ideal for
• Test Instrumentation
• General Communications
• Radar
• EW/ECM
Functional Diagram
HMC1087F10
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Features
High Psat: +38.5 dBm
Power Gain at Psat: 6.5 dB
High Output IP3: +43.5 dBm
Small Signal Gain: 11 dB
Supply Voltage: Vdd = +28V @ 850 mA
50 Ohm Matched Input/Output
10-Lead Flange Mount Package
General Description
The HMC1087F10 is an 8W Gallium Nitride (GaN)
MMIC Power Amplifier which operates between 2 and
20 GHz, and is provided in a 10-lead flange mount
package. The amplifier typically provides 11 dB of
small signal gain, +39 dBm of saturated output power,
and +43 dBm output IP3 at +28 dBm output power per
tone. The amplifier draws 850 mA quiescent current
from a +28V DC supply. The RF I/Os are matched to
50 Ohms for ease of use.
Electrical Specifications, TA = +25° C, Vdd =+28V, Idd = 850 mA [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min.
Frequency Range
2 - 12
12 - 17
Gain
8 11
7.5 10.5
7
Gain Flatness
±0.6
±0.6
Gain Variation Over Temperature
0.014
0.024
Input Return Loss
12 12
Output Return Loss
13 12
Output Power for 3 dB Compression (P3dB)
38.5
37.5
Power Gain for 3dB compression (P3dB)
8.5
7
Saturated Output Power (Psat)
39.5
38.5
Output Third Order Intercept (IP3) [2]
43.5
42.5
Power Added Efficiency
30 17
Total Supply Current
850 850
Typ.
17 - 20
10
±0.7
0.018
12
11
37
6
37.5
42
15
850
Max.
Units
GHz
dB
dB
dB/ °C
dB
dB
dBm
dB
dBm
dBm
mA
[1] Adjust Vgg between -8 to 0V to achieve Idd = 850 mA typical.
[2] Measurement taken at Pout / tone = +28 dBm.
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HMC1087F10 pdf
v03.1014
Output IM3 @ Vdd= +32V
70
60
50
40
30
20
10
15
18 21 24 27
Pout/TONE (dBm)
4 GHz
6 GHz
12 GHz
30 33
16 GHz
18 GHz
Power Compression @ 10 GHz
40 1300
35 1225
30 1150
25 1075
20 1000
15 925
10 850
5 775
0 700
3 6 9 12 15 18 21 24 27 30 33
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain & Power vs.
Supply Voltage @ 10 GHz
45
40
35
30
25
20
15
10
5
0
24 26 28 30
Vdd (V)
32
GAIN
P3dB
Psat
HMC1087F10
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Power Compression @ 3 GHz
40 900
35 875
30 850
25 825
20 800
15 775
10 750
5 725
0 700
3 6 9 12 15 18 21 24 27 30 33
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Power Compression @ 19 GHz
40 1200
35 1125
30 1050
25 975
20 900
15 825
10 750
5 675
0 600
2 5 8 11 14 17 20 23 26 29 32
INPUT POWER (dBm)
Pout
Gain
PAE
Idd
Gain & Power vs.
Supply Current @ 18 GHz
45
40
35
30
25
20
15
10
5
0
425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850
Idd (mA)
GAIN
P3dB
Psat
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HMC1087F10 arduino
v03.1014
Evaluation PCB [1]
HMC1087F10
8 WATT Flange Mount GaN MMIC
POWER AMPLIFIER, 2 - 20 GHz
Evaluation Order Information
Item
Contents
Evaluation PCB Only HMC1087F10 Evaluation PCB
[2] Reference this number when ordering Evaluation PCB Only
Part Number
EVAL01-HMC1087F10 [2]
List of Materials for Evaluation PCB EVAL01-HMC1087F10
Item
Description
J2, J3
SRI K Connector
J1 DC Connector
J4, J5
Preform jumpers
C1 - C6
1 uF Capacitor, 0602 Pkg.
C7 - C8
10 uF Capacitor, 1210 Pkg.
U1 HMC1087F10
PCB [1]
600-00619-00 Evaluation PCB.
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hit-
tite upon request.
[1] The universal evaluation board shown above is designed to support multible products, please refer to Application Circuit herein for
required external components.
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