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Numéro de référence | HMC1087 | ||
Description | 8 WATT GaN MMIC POWER AMPLIFIER | ||
Fabricant | Analog Devices | ||
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1 Page
v04.1014
HMC1087
8 WATT GaN MMIC POWER AMPLIFIER,
2 - 20 GHz
Typical Applications
The HMC1087 is ideal for:
• Test Instrumentation
• General Communications
• Radar
Features
High Psat: +39 dBm
Power Gain at Psat: +5.5 dB
High Output IP3: +44 dBm
Small Signal Gain: 11 dB
Supply Voltage: +28 V @ 850 mA
50 Ohm Matched Input/Output
Die Size: 2 x 4 x 0.1 mm
Functional Diagram
General Description
The HMC1087 is an 8W Gallium Nitride (GaN) MMIC
Power Amplifier which operates between 2 and 20
GHz. The amplifier typically provides 11dB of small
signal gain, +39 dBm of saturated output power, and
+44 dBm output IP3 at +29 dBm output power per tone.
The HMC1087 draws 850 mA quiescent current from
a +28V DC supply. The RF I/Os are matched to 50
Ohms for ease of integration into Multi-Chip-Modules
(MCMs). All electrical performance data was acquired
with the die eutectically attached to 1.02 mm (40 mil)
thick CuMo carrier with multiple 1.0 mil diameter ball
bonds connecting the die to 50 Ohm transmission
lines on alumina.
Electrical Specifications, Tc = +25°C, Vdd = +28 V, Idd = 850 mA [1]
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range
2-6
6 - 18
18 - 20
GHz
Small Signal Gain
10 11
10 12
10 12
dB
Gain Flatness
±0.5
±1.0
±0.5
dB
Gain Variation Over Temperature
0.012
0.016
0.024
dB/ °C
Input Return Loss
8 8 15 dB
Output Return Loss
10 12 12 dB
Output Power for 3 dB Compression (P3dB)
38
38
38 dBm
Power Gain for 3 dB compression (P3dB)
8.5
8.5
8 dB
Saturated Output Power (Psat)
39 40 39 dBm
Output Third Order Intercept (IP3) [2]
44
44
43.5
dBm
Power Added Efficiency
24 22 20 %
Quiescent Supply Current (Idd @ Vdd = 28V)
850
850
850 mA
[1] Assumes eutectic attach of die to a 40mil CuMo carrier, and 25°C is maintained at the back of the carrie
[2] Measurement taken at Pout / tone = +29 dBm
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Pages | Pages 10 | ||
Télécharger | [ HMC1087 ] |
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