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Analog Devices - GaAs MMIC 1 WATT POWER AMPLIFIER

Numéro de référence HMC637A
Description GaAs MMIC 1 WATT POWER AMPLIFIER
Fabricant Analog Devices 
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HMC637A fiche technique
Typical Applications
The HMC637A is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC637A
v01.0715
GaAs MMIC 1 WATT
POWER AMPLIFIER DC - 6 GHz
Features
P1dB Output Power: +30.5 dBm
Gain: 14 dB
Output IP3: +41 dBm
Bias Supplies: +12V, +6V, -1V
50 Ohm Matched Input/Output
Die Size: 2.98 x 2.48 x 0.1 mm
General Description
The HMC637A is a GaAs MMIC MESFET Distributed
Power Amplifier die which operates between DC and
6 GHz. The amplifier provides 14 dB of gain,
+41 dBm output IP3 and +30.5 dBm of output power
at 1 dB gain compression while requiring 400mA
from a +12V supply. Gain flatness is excellent at ±0.5
dB from DC to 6 GHz making the HMC637A ideal for
EW, ECM, Radar and test equipment applications.
The HMC637A amplifier I/Os are internally matched
to 50 Ohms facilitating integration into Mutli-Chip-
Modules (MCMs). All data is taken with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd= +12V, Vgg2= +6V, Idd= 400mA[1]
Parameter
Frequency
Gain
DC - 6.0 GHz
Gain Flatness
DC - 6.0 GHz
Gain Variation Over Temperature
DC - 6.0 GHz
Input Return Loss
DC - 6.0 GHz
Output Return Loss
DC - 6.0 GHz
Output Power for 1 dB Compression (P1dB)
DC - 6.0 GHz
Saturated Output Power (Psat)
DC - 6.0 GHz
Output Third Order Intercept (IP3) [2]
DC - 6.0 GHz
Noise Figure
DC - 2 GHz
2.0 - 6.0 GHz
Supply Current (Idd)
[1] Adjust Vgg1 between -2V to 0V to achieve Idd= 400mA typical.
[2] Two-Tone Output Power = 0dBm Per Tone , 1 MHz Spacing.
Min.
11
Typ.
14
±0.5
0.008
14
18
30.5
31.5
43
12
4
400
Max.
Units
dB
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
dB
mA
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