HMC1114 Datasheet PDF - Analog Devices
| Part Number | HMC1114 | |
| Description | Power Amplifier | |
| Manufacturers | Analog Devices | |
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Data Sheet
FEATURES
High saturated output power (PSAT): 41.5 dBm typical
High small signal gain: 35 dB typical
High power gain for saturated output power: 25.5 dB typical
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54% typical
High output IP3: 44 dBm typical
Supply voltage: VDD = 28 V at 150 mA
32-lead, 5 mm × 5 mm LFCSP_CAV package
APPLICATIONS
Extended battery operation for public mobile radios
Power amplifier stage for wireless infrastructure
Test and measurement equipment
Commercial and military radars
General-purpose transmitter amplification
GENERAL DESCRIPTION
The HMC1114 is a gallium nitride (GaN), broadband power
amplifier, delivering 10 W with more than 50% power added
efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The
HMC1114 provides ±0.5 dB gain flatness.
10 W, GaN Power Amplifier,
2.7 GHz to 3.8 GHz
HMC1114
FUNCTIONAL BLOCK DIAGRAM
HMC1114
GND 1
GND 2
GND 3
RFIN 4
RFIN 5
GND 6
GND 7
GND 8
24 GND
23 GND
22 GND
21 RFOUT
20 RFOUT
19 GND
18 GND
17 GND
PACKAGE
BASE
Figure 1.
The HMC1114 is ideal for pulsed or continuous wave (CW)
applications such as wireless infrastructure, radar, public mobile
radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP_CAV package.
Rev. 0
Document Feedback
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarksandregisteredtrademarksarethepropertyoftheirrespectiveowners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
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HMC1114
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Drain Bias Voltage (VDD1, VDD2)
Gate Bias Voltage (VGG1, VGG2)
RF Input Power (RFIN)
Maximum Forward Gate Current
Continuous Power Dissipation, PDISS (TA = 85°C,
Derate 227 mW/°C Above 120°C)
Thermal Resistance, Junction to Back of Paddle
Channel Temperature
Maximum Peak Reflow Temperature (MSL3)1
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity (Human Body Model)
Rating
35 V dc
−8 V to 0 V dc
30 dBm
4 mA
24 W
4.4°C/W
225°C
260°C
−40°C to +125°C
−40°C to +85°C
Class 1A,
passed 250 V
1 See the Ordering Guide section.
Data Sheet
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
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| Information | Total 16 Pages | |
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| Download | [ HMC1114.PDF Datasheet ] | |
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