DataSheetWiki


HMC1016 fiches techniques PDF

Analog Devices - GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER

Numéro de référence HMC1016
Description GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER
Fabricant Analog Devices 
Logo Analog Devices 





1 Page

No Preview Available !





HMC1016 fiche technique
Typical Applications
TheHMC1016 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• VSAT & SATCOM
• Military & Space
Functional Diagram
HMC1016
v00.1111
GaAs PHEMT MMIC
MEDIUM POWER AMPLIFIER, 34 - 46.5 GHz
Features
P1dB Output Power: +24 dBm
Psat Output Power: +26 dBm
High Gain: 22 dB
Output IP3: +34 dBm
Supply Voltage: Vdd = +6V @ 250 mA
50 Ohm Matched Input/Output
Die Size: 0.90 x 2.22 x 0.1 mm
General Description
The HMC1016 is a four stage GaAs PHEMT MMIC
Medium Power Amplifier die which operates between
34 and 46.5 GHz. The amplifier provides 22 dB of gain,
+26 dBm of saturated output power, and 17% PAE from
a +6V supply. With up to +37 dBm IP3 the HMC1016 is
ideal for high linearity applications in miltary and space
as well as point-to-point and point-to-multi-point radios.
The HMC1016 amplifier I/Os are internally matched
facilitating integration into mutli-chip-modules (MCMs).
All data shown herein was measured with the chip
connected via two 0.025mm (1 mil) wire bonds of
minimal length 0.31 mm (12 mils).
Electrical Specifications, TA = +25° C, Vdd = Vdd1 = Vdd2 = +6V, Idd = 250 mA [1]
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3) [2]
Total Supply Current
Min.
19
21
Typ.
34 - 40
22
0.028
13
11
24
26
34
250
Max.
Min.
20
21
Typ.
40 - 46.5
23
0.038
18
12
24
26
34
250
Max.
[1] Adjust Vgg between -2 to 0V to achieve Idd = 250 mA typical.
[2] Measurement taken at Pout / tone = +14 dBm.
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
mA
1 IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetaspsc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecenw:rPmhdign9aeeMhhnrn7rtegssotls.8ieiaocnobwf-fre2lAiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3-ecrev2eo7riC,.ct5h3eNneos0oor.r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eEol2ulgpiil9vnpiysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,te0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,

PagesPages 11
Télécharger [ HMC1016 ]


Fiche technique recommandé

No Description détaillée Fabricant
HMC1010LP4E RMS Power Detector Hittite Microwave
Hittite Microwave
HMC1013LP4E SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER Hittite
Hittite
HMC1014 GaAs pHEMPT MMIC Hittite
Hittite
HMC1015 GaAs MMIC Hittite
Hittite

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche