|
|
PDF HMC326MS8GE Data sheet ( Hoja de datos )
| Número de pieza | HMC326MS8GE | |
| Descripción | GaAs InGaP HBT MMIC DRIVER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de HMC326MS8GE (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
HMC326MS8G / 326MS8GE
v09.0511
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
Typical Applications
The HMC326MS8G / HMC326MS8GE is ideal for:
• Microwave Radios
• Broadband Radio Systems
• Wireless Local Loop Driver Amplifier
Features
Psat Output Power: +26 dBm
> 40% PAE
Output IP3: +36 dBm
High Gain: 21 dB
Vs: +5V
Ultra Small Package: MSOP8G
Functional Diagram
General Description
The HMC326MS8G & HMC326MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC driver amplifiers which
operate between 3.0 and 4.5 GHz. The amplifier
is packaged in a low cost, surface mount 8 leaded
package with an exposed base for improved RF and
thermal performance. The amplifier provides 21 dB
of gain and +26 dBm of saturated power from a +5V
supply voltage. Power down capability is available to
conserve current consumption when the amplifier is
not in use. Internal circuit matching was optimized to
provide greater than 40% PAE.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icc)
Supply Current (Icc)
Control Current (Ipd)
Switching Speed
Min.
18
Vpd = 0V
Vpd = 5V
tOn/tOff
21
32
110
Typ.
3.0 - 4.5
21
0.025
12
7
23.5
26
36
5
1
130
7
10
Max.
0.035
160
Units
GHz
dB
dB / °C
dB
dB
dBm
dBm
dBm
dB
uA
mA
mA
ns
1 IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetaspsc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecenw:rPmhdign9aeeMhhnrn7rtegssotls.8ieiaocnobwf-fre2lAiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3-ecrev2eo7riC,.ct5h3eNneos0oor.r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eEol2ulgpiil9vnpiysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,te0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,
1 page  
v09.0511
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage Range (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 14 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+5.5 Vdc
+5.5 Vdc
+15 dBm
150 °C
0.916 W
71 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A
Outline Drawing
HMC326MS8G / 326MS8GE
GaAs InGaP HBT MMIC DRIVER
AMPLIFIER, 3.0 - 4.5 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC326MS8G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC326MS8GE RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H326
XXXX
H326
XXXX
IrrlTiniecgrfaseohFpdntrseomsoemnoarsfatiisibtrophkingislrirrtdayafiuncnpirsdtnaeeairdrste,sihegsbesduiysdmtteheimebarledtypidvmlbiAcetyaranPayArtadioyrlhnoeenamgsolauooanlDrgtnrkeofeDrsdvtoh:eiamcevrt9eAreicowist7etspihssipe8usepfsop-lbeularr2.neioicdtSlcp5iseepeaevu0rreetstcya-deioinofo3,iycfrtnno3atdophtria4eboeSftienoer3rsrnursaetaspsc:noupcyrbpeHujipcernFoaatcifirttvttareieetnttnoixg:aottecenw:rPmhdign9aeeMhhnrn7rtegssotls.8ieiaocnobwf-fre2lAiepoth:n.5aowatH9ue0lotona7g-wntsv38oDeotevi3-ecrev2eo7riC,.ct5h3eNneos0oor. r-p3oFOPA3Oohprn4arrope3dntlpiTieecorei:aorcnc7treihO,8o,n1n2naod-S3lp-eEol2ulgpiil9vnpiysez-pe4rW@aoy7arb,a0hty:tae0i,Pntwt•Ptdhhi.wOtoOetDnor.w.decrB:epi.ovo1hrlax-emoi8ctn9,te0l1iCi0tn0oe-eh6rA.d,ceaNeNtolArmwosmL:rwOswAfwGoono.-aardDdlno,a,gMloMADgAe.0cv2oi0c0me16s28,-29In410c.6,
4
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC326MS8GE.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HMC326MS8G | GaAs InGaP HBT MMIC DRIVER AMPLIFIER |  Hittite Microwave Corporation |
| HMC326MS8GE | GaAs InGaP HBT MMIC DRIVER AMPLIFIER | Analog Devices |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |