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PDF HMC406MS8GE Data sheet ( Hoja de datos )
| Número de pieza | HMC406MS8GE | |
| Descripción | GaAs InGaP HBT MMIC POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
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HMC406MS8G / 406MS8GE
v06.0611
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
Typical Applications
The HMC406MS8G(E) is ideal for:
• WiMAX & WiLAN
• DSRC
• Military & Maritime
• Private Mobile Radio
• UNII & ISM
Features
Gain: 17 dB
Saturated Power: +29 dBm
38% PAE
Supply Voltage: +5V
Power Down Capability
Low External Part Count
Functional Diagram
General Description
The HMC406MS8G(E) is a high efficiency GaAs
InGaP Heterojunction Bipolar Transistor (HBT) MMIC
Power amplifier which operates between 5 and 6
GHz. The amplifier is packaged in a low cost, surface
mount 8 leaded package with an exposed base
for improved RF and thermal performance. With
a minimum of external components, the amplifier
provides 17 dB of gain and +29 dBm of saturated
power at 38% PAE from a +5V supply voltage. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
Min.
13
21
34
Typ.
5-6
16
0.03
10
8
24
27
38
6.0
0.002 / 300
7
35
Max.
21
0.04
Min. Typ. Max. Units
5.7 - 5.9
GHz
14 17 21 dB
0.03
0.04 dB/ °C
11 dB
9 dB
24 27
dBm
29 dBm
34 38
dBm
6.0 dB
0.002 / 300
mA
7 mA
35 ns
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1 page  
v06.0611
Absolute Maximum Ratings
Collector Bias Voltage (Vcc)
Control Voltage (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5V)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 32 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5V
+5.5V
+20 dBm
150 °C
2.1 W
31 °C/W
-65 to +150 °C
-40 to +85° C
HMC406MS8G / 406MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 6 GHz
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC406MS8G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC406MS8GE RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
100% matte Sn
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H406
XXXX
H406
XXXX
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4
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| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HMC406MS8GE.PDF ] | |
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