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PDF HMC407MS8GE Data sheet ( Hoja de datos )
| Número de pieza | HMC407MS8GE | |
| Descripción | GaAs InGaP HBT MMIC POWER AMPLIFIER | |
| Fabricantes | Analog Devices | |
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HMC407MS8G / 407MS8GE
v03.1006
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
11
Typical Applications
This amplifier is ideal for use as a power
amplifier for 5 - 7 GHz applications:
• UNII
• HiperLAN
Features
Gain: 15 dB
Saturated Power: +29 dBm
28% PAE
Supply Voltage: +5V
Power Down Capability
No External Matching Required
Functional Diagram
General Description
The HMC407MS8G & HMC407MS8GE are high
efficiency GaAs InGaP Heterojunction Bipolar
Transistor (HBT) MMIC Power amplifiers which
operate between 5 and 7 GHz. The amplifier requires
no external matching to achieve operation and is
thus truly 50 Ohm matched at input and output. The
amplifier is packaged in a low cost, surface mount
8 leaded package with an exposed base for im-
proved RF and thermal performance. The amplifier
provides 15 dB of gain, +29 dBm of saturated power
at 28% PAE from a +5V supply voltage. Power down
capability is available to conserve current consum-
ption when the amplifier is not in use.
11 - 28
Electrical Specifications, TA = +25° C, Vs = 5V, Vpd = 5V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Noise Figure
Supply Current (Icq)
Control Current (Ipd)
Switching Speed
Vpd = 0V/5V
Vpd = 5V
tON, tOFF
Min.
10
21
32
Typ.
5-7
15
0.025
12
15
25
29
37
5.5
0.002 / 230
7
30
Max.
18
0.035
Min.
12
22
36
Typ.
5.6 - 6.0
15
0.025
12
15
25
29
40
5.5
0.002 / 230
7
30
Max.
18
0.035
Units
GHz
dB
dB/ °C
dB
dB
dBm
dBm
dBm
dB
mA
mA
ns
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1 page  
v03.1006
Gain, Power & Quiescent
Supply Current vs. Vpd @ 5.8 GHz
30
25
P1dB
20 Psat
Gain
15 Icq
10
5
2.5 3 3.5 4 4.5
Vpd (Vdc)
250
200
150
100
50
0
5
Outline Drawing
HMC407MS8G / 407MS8GE
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 5 - 7 GHz
Absolute Maximum Ratings
Collector Bias Voltage (Vcc1, Vcc2)
Control Voltage (Vpd)
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
Junction Temperature
Continuous Pdiss (T = 85 °C)
(derate 31 mW/°C above 85 °C)
Thermal Resistance
(junction to ground paddle)
Storage Temperature
Operating Temperature
+5.5 Vdc
+5.5 Vdc
+20 dBm
150 °C
2W
32 °C/W
-65 to +150 °C
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
11
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
HMC407MS8G
Low Stress Injection Molded Plastic
Lead Finish
Sn/Pb Solder
HMC407MS8GE RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
MSL Rating
MSL1 [1]
MSL1 [2]
Package Marking [3]
H407
XXXX
H407
XXXX
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11 - 31
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| PDF Descargar | [ Datasheet HMC407MS8GE.PDF ] | |
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