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PDF HMC-ALH311 Data sheet ( Hoja de datos )
| Número de pieza | HMC-ALH311 | |
| Descripción | GaAs HEMT MMIC LOW NOISE DRIVER AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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v02.0209
1
Typical Applications
This HMC-ALH311 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Military & Space
• Test Instrumentation
HMC-ALH311
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Features
P1dB Output Power: +12 dBm
Gain: 25 dB
Noise Figure: 3 dB @ 25 GHz
Supply Voltage: +2.5V @ 52 mA
Die Size: 1.80 x 0.73 x 0.1 mm
Functional Diagram
General Description
The HMC-ALH311 is a GaAs MMIC HEMT Low Noise
Driver Amplifier die which operates between 22 and
26.5 GHz. The amplifier provides 25 dB of gain, a
typical noise figure of 3 dB at 25 GHz, and +12 dBm of
output power at 1 dB gain compression while requiring
only 52 mA from a +2.5V supply voltage. The HMC-
ALH311 is ideal for microwave radio driver amplifier
applications between 22 to 26.5 GHz. Due to its small
size, the HMC-ALH311 die is ideal for integration into
Multi-Chip-Modules (MCMs).
Electrical Specifications*, TA = +25° C, Vdd = 2.5V
Parameter
Min. Typ.
Frequency Range
22 - 24
Gain
22 25
Gain Variation over Temperature
0.03
Noise Figure
3.5
Input Return Loss
10
Output Return Loss
12
Output Power for 1 dB Compression
12
Supply Current (Vdd = 2.5V, Vgg1 = -0.3V Typ.)
52
*Unless otherwise indicated, all measurements are from probed die
Max.
4.5
Min. Typ. Max.
24 - 26.5
3 3.5
15
15
12
52
Units
GHz
dB
dB / °C
dB
dB
dB
dBm
mA
1 - 144
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1 page  
1
Assembly Diagram
v02.0209
HMC-ALH311
GaAs HEMT MMIC LOW NOISE
DRIVER AMPLIFIER, 22.0 - 26.5 GHz
Note 1: Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the amplifier
Note 2: Best performance obtained from use of <10 mil (long) by 3 by 0.5mil ribbons on input and output.
1 - 148
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5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC-ALH311.PDF ] | |
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