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PDF HMC618ALP3E Data sheet ( Hoja de datos )
| Número de pieza | HMC618ALP3E | |
| Descripción | GaAs SMT pHEMT LOW NOISE AMPLIFIER | |
| Fabricantes | Analog Devices | |
| Logotipo |  |
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7
7-1
HMC618ALP3E
v00.1014
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Typical Applications
The HMC618ALP3E is ideal for:
• Cellular/3G and LTE/WiMAX/4G
• BTS & Infrastructure
• Repeaters and Femto Cells
• Public Safety Radios
Features
Noise Figure: 0.75 dB
Gain: 19 dB
OIP3: 36 dBm
Single Supply: +3V to +5V
50 Ohm Matched Input/Output
16 Lead 3x3mm SMT Package: 9 mm2
Functional Diagram
General Description
The HMC618ALP3E is a GaAs pHEMT MMIC
Low Noise Amplifier that is ideal for Cellular/3G and
LTE/WiMAX/4G basestation front-end receivers
operating between 1.2 - 2.2 GHz. The amplifier has
been optimized to provide 0.75 dB noise figure,
19 dB gain and +36 dBm output IP3 from a single
supply of +5V. Input and output return losses are
excellent and the LNA requires minimal external
matching and bias decoupling components. The
HMC618ALP3E shares the same package and
pinout with the HMC617LP3E 0.55 - 1.2 GHz LNA.
The HMC618ALP3E can be biased with +3V to +5V
and features an externally adjustable supply current
which allows the designer to tailor the linearity
performance of the LNA for each application. The
HMC618ALP3E offers improved noise figure versus
the previously released HMC375LP3(E) and the
HMC382LP3(E).
Electrical Specifications
TA = +25° C, Rbias = 470 Ohm for Vdd1 = Vdd2 = 5V
Parameter
Min. Typ. Max.
Frequency Range
1200 - 1700
Gain
19 23
Gain Variation Over Temperature
0.012
Noise Figure
0.65
0.85
Input Return Loss
22.5
Output Return Loss
13
Output Power for 1 dB
Compression (P1dB)
19
Saturated Output Power (Psat)
20.5
Output Third Order Intercept (IP3)
29.4
33.5
Supply Current (Idd)
89 118
* Rbias resistor sets current, see application circuit herein
Vdd = 5 Vdc
Min. Typ. Max.
1700 - 2000
16 19
0.008
0.75 1.1
18
12.5
16.5
20
29.5
20.5
35
89
118
Min. Typ. Max.
2000 - 2200
13.5
17
0.008
0.85
1.15
19.5
10
18 20
30.4
20.5
35.5
89
118
Units
MHz
dB
dB/°C
dB
dB
dB
dBm
dBm
dBm
mA
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1 page  
v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
1700 to 2200 MHz Tune
Output IP3 and Idd vs.
Supply Voltage @ 1700 MHz [1]
39
37
35
33
31
29
27
25
4.5
5
VOLTAGE SUPPLY (V)
IP3
140
120
100
80
60
40
20
0
5.5
Idd
Output IP3 and Idd vs.
Supply Voltage @ 2100 MHz [1]
39
37
35
33
31
29
27
25
4.5
5
VOLTAGE SUPPLY (V)
IP3
140
120
100
80
60
40
20
0
5.5
Idd
Power Compression @ 1700 MHz [1]
25 110
Output IP3 and Idd vs.
Supply Voltage @ 1700 MHz [2]
38
36
34
32
30
28
26
24
4.5
5
VOLTAGE SUPPLY (V)
IP3
140
120
100
80
60
40
20
0
5.5
Idd
Output IP3 and Idd vs.
Supply Voltage @ 2100 MHz [2]
38
36
34
32
30
28
26
24
4.5
5
VOLTAGE SUPPLY (V)
IP3
140
120
100
80
60
40
20
0
5.5
Idd
Power Compression @ 1700 MHz [2]
25 77
20 105 20 70
15 100 15 63
10 95 10 56
5 90 5 49
0
-10 -8
-6 -4 -2 0
INPUT POWER (dBm)
Pout
Gain
Idd
85
24
PAE
[1] Vdd = 5V, Rbias = 470 Ohm [2] Vdd = 3V, Rbias = 10K Ohm
0
-14 -12 -10
-8 -6 -4 -2
INPUT POWER (dBm)
Pout
Gain
Idd
0
42
24
PAE
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7
7-4
5 Page 
v00.1014
HMC618ALP3E
GaAs SMT pHEMT LOW NOISE
AMPLIFIER, 1.2 - 2.2 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd1, Vdd2)
RF Input Power (RFIN)
(Vdd = +5 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 9.68 mW/°C above 85 °C)
Thermal Resistance
(channel to ground paddle)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+6V
+10 dBm
150 °C
0.63 W
103.4 °C/W
-65 to +150 °C
-40 to +85 °C
Class 1A, Passed 250V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Typical Supply Current vs. Vdd
Rbias = 10 KOhm for 3V
Rbias = 470 Ohm for 5V
Vdd (Vdc)
Idd (mA)
2.7 35
3.0 47
3.3 58
4.5 72
5.0 89
5.5 106
Note: Amplifier will operate over full voltage ranges shown above.
7
Package Information
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Part Number
Package Body Material
HMC618LP3E RoHS-compliant Low Stress Injection Molded Plastic
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
Lead Finish
100% matte Sn
MSL Rating
MSL1 [1]
Package Marking [2]
618
XXXX
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7 - 10
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet HMC618ALP3E.PDF ] | |
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