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Analog Devices - GaAs pHEMT LOW NOISE AMPLIFIER

Numéro de référence HMC374SC70E
Description GaAs pHEMT LOW NOISE AMPLIFIER
Fabricant Analog Devices 
Logo Analog Devices 





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HMC374SC70E fiche technique
Typical Applications
The HMC374SC70E is ideal for:
• Cellular/PCS/3G
• WCS, MMDS & ISM
• Fixed Wireless & WLAN
• Private Land Mobile Radio
Functional Diagram
HMC374SC70E
v01.0814
GaAs pHEMT LOW NOISE AMPLIFIER
0.3 - 3.0 GHz
Features
Single Supply: Vdd = +3.0 to +3.6V
Broadband Performance
Low Noise Figure: 1.6 dB
High Output IP3: +35 dBm
High Gain: 15 dB @ 0.6 GHz
General Description
The HMC374SC70E is a general purpose broad-
band Low Noise Amplifier (LNA) for use in the 0.3 -
3 GHz frequency range. The LNA provides 15 dB of
gain and a 1.6 dB noise figure from a single positive
supply of +3.0 to +3.6V. The low noise figure coupled
with a high P1dB (17 dBm) and high OIP3 (35 dBm)
make this part ideal for cellular applications. The
compact LNA is designed for repeatable gain and
noise figure performance. To minimize board area the
design is offered in a low cost SC70E package that
occupies only 0.089" x 0.053".
Electrical Specifications, Vdd= +3.3V
Parameter
Min. [2] Typ.[1] Max. [2] Min. [2]
Frequency
0.6
Gain
14 15
13
Gain Variation Over Temperature
(-40°C to +25°C)
0.005
Gain Variation Over Temperature
(+25 °C to +85 °C)
0.004
Noise Figure
2 2.6
Input Return Loss
4.5 5.5
6
Output Return Loss
5.5 7.5
8
Output 1 dB Compression (P1dB)
15.5 16.5
16
Saturated Output Power (Psat)
17.5 18.5
17.5
Output Third Order Intercept (OIP3)
34
Supply Current (Idd) (Vdd = +3.3V)
75
Supply Voltage (Vdd)
3.0 3.3 3.6 3.0
[1] Typical values are determined at TA=+25°C
[2] Minimum and maximum values are determined from TA=-40°C to TA=+85°C
Typ. [1]
1.0
14.5
0.008
0.005
1.6
7.5
10
17
18.5
33.5
75
3.3
Max. [2] Min. [2]
6
2.3
8
13
16.5
18
3.6 3.0
Typ. [1]
3.0
8.5
0.012
0.008
1.8
9
15
18
19
36
75
3.3
Max. [2]
2.2
3.6
Units
GHz
dB
dB/°C
dB
dBm
mA
V
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