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PDF HMC463LH250 Data sheet ( Hoja de datos )
| Número de pieza | HMC463LH250 | |
| Descripción | GaAs pHEMT MMIC LOW NOISE AGC AMPLIFIER | |
| Fabricantes | Hittite | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HMC463LH250 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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v04.1010
7
Typical Applications
The HMC463LH250 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military EW, ECM & C3I
• Test Instrumentation
• Fiber Optics
Functional Diagram
HMC463LH250
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Features
50 Ohm Matched Input/Output
Hermetic SMT Package
Gain: 14 dB
Noise Figure: 2.5 dB @ Mid-Band
P1dB Output Power: +18 dBm @ Mid-Band
Supply Voltage: +5V @ 60mA
Screening to MIL-PRF-38535 (Class B or S) Available
General Description
The HMC463LH250 is a GaAs MMIC pHEMT Low
Noise AGC Distributed Amplifier packaged in a
hermetic surface mount package which operates
between 2 and 20 GHz. The amplifier provides 13
dB of gain, 3 dB noise figure and 18 dBm of output
power at 1 dB gain compression while requiring only
60 mA from a +5V supply. An optional gate bias
(Vgg2) is provided to allow Adjustable Gain Control
(AGC) of 8 dB typical. Gain flatness is excellent at
±0.5 dB from 2 - 14 GHz making the HMC463LH250
ideal for EW, ECM RADAR, test equipment and
High-Reliability applications. The HMC463LH250
LNA I/Os are internally matched to 50 Ohms and are
internally DC blocked.
7-1
Electrical Specifications, TA = +25° C, Vdd= 5V, Vgg2= Open, Idd= 60 mA*
Parameter
Min. Typ. Max.
Frequency Range
2.0 - 6.0
Gain
11.5 14.5
Gain Flatness
±0.25
Gain Variation Over Temperature
0.010
Noise Figure
3.5 5.5
Input Return Loss
15
Output Return Loss
11
Output Power for 1 dB Compression (P1dB)
16
19
Saturated Output Power (Psat)
21.5
Output Third Order Intercept (IP3)
29
Supply Current
(Idd) (Vdd= 5V, Vgg1= -0.9V Typ.)
60 80
* Adjust Vgg1 between -2 to -0V to achieve Idd= 60 mA typical.
Min.
9
13
Typ.
6.0 - 16.0
12
±0.5
0.010
2.5
15
15
18
20.5
27
Max.
4.5
60 80
Min. Typ. Max.
16.0 - 20.0
8 11
±0.9
0.010
4 5.5
9
7
10 13
19
24
60 80
Units
GHz
dB
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
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1 page  
v04.1010
Gain @ Several Control Voltages
18
14
10
6
2
-2
-6
Vgg2=-1.3 V
Vgg2=-0.8 V
Vgg2=-1.2 V
Vgg2=-0.6 V
-10
Vgg2=-1.1 V
Vgg2=-0.4 V
Vgg2=-1.0 V
Vgg2=-0.2 V
-14
Vgg2=-0.9 V
Vgg2=0 V
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC463LH250
GaAs pHEMT MMIC LOW NOISE
AGC AMPLIFIER, 2 - 20 GHz
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Current (Igg1)
Gate Bias Voltage (Vgg2)(AGC)
RF Input Power (RFIN)(Vdd = +5 V)
Channel Temperature
Storage Temperature
Operating Temperature
+9 V
-2 to 0 Vdc
2.5 mA
(Vdd -9)
Vdc to +2 Vdc
+18 dBm
175 °C
-65 to +150 °C
-40 to +85 °C
Typical Supply Current vs. Vdd
Vdd (V)
+4.5
+5.0
+5.5
Idd (mA)
58
60
62
7
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: CERAMIC & KOVAR
2. LEAD AND GROUND PADDLE PLATING: GOLD 40-80 MICROINCHES.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.
5. PAD BURR LENGTH 0.15mm MAX. PAD BURR HEIGHT 0.25mm MAX.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
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7-4
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| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HMC463LH250.PDF ] | |
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