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Numéro de référence | WPM1481 | ||
Description | Single P-Channel Power MOSFET | ||
Fabricant | WillSEMI | ||
Logo | |||
1 Page
WPM1481
Single P-Channel, -12V, -5.5A, Power MOSFET
VDS (V)
-12
Typical Rds(on) (Ω)
0.022@ VGS=-4.5V
0.030@ VGS=-2.5V
0.045@ VGS=-1.8V
ID (A)
-5.5
-4.0
-2.5
Descriptions
The WPM1481 is P-Channel enhancement
MOS Field Effect Transistor. Uses advanced trench
technology and design to provide excellent RDS (ON)
with low gate charge. This device is suitable for use
in DC-DC conversion, power switch and charging
circuit. Standard Product WPM1481 is Pb-free.
Features
Trench Technology
Supper high density cell design
Excellent ON resistance for higher DC current
Extremely Low Threshold Voltage
Small package DFN2*2-6L
WPM1481
Http://www.sh-willsemi.com
DFN2*2-6L
DDS
6 54
D
S
1 23
D DG
Pin configuration (Top view)
6 54
WLSI
CYWW
1
WLSI
C
Y
WW
23
= Company Code
= Device Code
= Year
= Week
Applications
Driver for Relay, Solenoid, Motor, LED etc.
DC-DC converter circuit
Power Switch
Load Switch
Charging
Marking
Order information
Device
WPM1481- 6/TR
Package
DFN2*2-6L
Shipping
3000/Reel&Tape
Will Semiconductor Ltd. 1 May, 2013 - Rev.1.3
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Pages | Pages 7 | ||
Télécharger | [ WPM1481 ] |
No | Description détaillée | Fabricant |
WPM1480 | P-Channel MOSFET | Will Semiconductor |
WPM1481 | Single P-Channel Power MOSFET | WillSEMI |
WPM1483 | P-Channel MOSFET | Will Semiconductor |
WPM1485 | P-Channel MOSFET | Will Semiconductor |
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