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ROHM Semiconductor - Middle Power Transistors

Numéro de référence 2SAR562F3
Description Middle Power Transistors
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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2SAR562F3 fiche technique
2SAR562F3
PNP -6A -30V Middle Power Transistor
Datasheet
Parameter
VCEO
IC
Value
-30V
-6A
lFeatures
1) Suitable for Middle Power Driver
2) Low VCE(sat)
VCE(sat)= -300mV(Max.) (IC/IB= -3A/ -60mA)
3) High collector current
IC = -6A (max) , ICP = -7A (max)
4) Leadless small SMD package "HUML2020L3"
Excellent thermal and electrical conductivity
5) Lead Free/RoHS Compliant.
lOutline
HUML2020L3
Collector
Base
Emitter
Emitter
Base
Collector
2SAR562F3
lInner circuit
Collector
Base
Emitter
lApplications
Load switch, Battery-driven devices, Power management
Charging circuits, Power switches (e.g. motors, fans)
lPackaging specifications
Part No.
Package
2SAR562F3 HUML2020L3
Package
size
(mm)
Taping
code
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
2020
TR
180
8 3,000
Marking
MT
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/6
2013.05 - Rev.A

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