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Panasonic - Silicon PNP epitaxial planar type Power Transistors

Numéro de référence 2SA2079
Description Silicon PNP epitaxial planar type Power Transistors
Fabricant Panasonic 
Logo Panasonic 





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2SA2079 fiche technique
Transistors
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
High forward current transfer ratio hFE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm × 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
45
45
7
100
200
100
125
55 to +125
Unit
V
V
V
mA
mA
mW
°C
°C
Unit: mm
32
1.00±0.05
1
0.39+−00..0013
0.25±0.05
0.25±0.05
1
32
0.65±0.01
0.05±0.03
1: Base
2: Emitter
3: Collector
Marking Symbol : 3D
ML3-N2 Package
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cut-off current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
VCBO
VCEO
VEBO
ICBO
ICEO
hFE
VCE(sat)
fT
Cob
IC = –10 µA, IE = 0
IC = –2 mA, IB = 0
IE = –10 µA, IC = 0
VCB = –20 V, IE = 0
VCE = –10 V, IB = 0
VCE = –10 V, IC = –2 mA
IC = –100 mA, IB = –10 mA
VCB = –10 V, IE = 1 mA, f = 200 MHz
VCB = –10 V, IE = 0, f = 1 MHz
45
45
7
180
0.2
80
2.2
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Max
0.1
100
390
0.5
Unit
V
V
V
µA
µA
V
MHz
pF
Publication date : December 2004
SJC00326AED
1

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