DataSheetWiki


2N3767 fiches techniques PDF

MA-COM - NPN Power Silicon Transistor

Numéro de référence 2N3767
Description NPN Power Silicon Transistor
Fabricant MA-COM 
Logo MA-COM 





1 Page

No Preview Available !





2N3767 fiche technique
2N3766 & 2N3767
NPN Power Silicon Transistor
Features
Available in JAN, JANTX, JANTXV per MIL-PRF-
19500/518
TO-66 (TO-213AA) Package
Rev. V1
Electrical Characteristics
Parameter
Test Conditions
Symbol Units
Off Characteristics
Collector - Emitter Breakdown Voltage
Collector - Emitter Cutoff Current
Collector - Emitter Cutoff Current
Collector - Base Cutoff Current
Emitter - Base Cutoff Current
On Characteristics1
Forward Current Transfer Ratio
Collector - Emitter Saturation Voltage
Emitter - Base Voltage
Dynamic Characteristics
IC = 100 mAdc, 2N3766
IC = 100 mAdc, 2N3767
VCE = 60 Vdc, 2N3766
VCE = 80 Vdc, 2N3767
VCE = 80 Vdc, VBE = 1.5 Vdc, 2N3766
VCE = 100 Vdc, VBE = 1.5 Vdc, 2N3767
VCB = 80 Vdc, 2N3766
VCB = 100 Vdc, 2N3767
VEB = 6 Vdc
V(BR)CEO Vdc
ICEO µAdc
ICEX µAdc
ICBO µAdc
IEBO µAdc
IC = 50 mAdc, VCE = 5 Vdc
IC = 500 mAdc, VCE = 5 Vdc
IC = 1 Adc, VCE = 10 Vdc
IC = 1 Adc, IB = 0.1 Adc
IC = 0.5 Adc, IB = 0.5 Adc
IC = 1 Adc, VCE = 10 Vdc
HFE -
VCE(SAT) Vdc
VBE(ON) Vdc
Magnitude of Common Emitter Small-Signal
Short-Circuit Forward Current Transfer Ratio
IC = 500 mAdc, VCE = 10 Vdc, f = 10 mHz
| HFE |
-
Min.
60
80
30
40
20
1
Max.
500
500
10
10
10
10
500
160
2.5
1.0
1.5
8
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz ≤ f ≤ 1 MHz COBO pF
50
Switching Characteristics
Turn-On Time
VCC = 30 Vdc; IC = 0.5 Adc;
IB1 = 0.05 Adc
Turn-Off Time
VCC = 30 Vdc; IC = 0.5 Adc;
IB1 = -IB2 = 0.05 Adc
Safe Operating Area
DC Tests:
Test 1:
Test 2:
Test 3:
TC = +25 °C, I Cycle, t = 1.0 s
VCE = 6.22 Vdc, IC = 4 Adc
VCE = 20 Vdc, IC = 1.25 Adc
VCE = 50 Vdc, IC = 150 Adc, 2N3766
VCE = 65 Vdc, IC = 150 Adc, 2N3767
1 1. Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤2.0%.
TON
TOFF
µs
µs
0.25
2.5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support

PagesPages 3
Télécharger [ 2N3767 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N3762 Type 2N3762 Geometry 6706 Polarity PNP Semicoa Semiconductor
Semicoa Semiconductor
2N3762 PNP SIlicon Small-Signal Transistor Motorola Semiconductors
Motorola Semiconductors
2N3762 PNP SWITCHING SILICON TRANSISTOR Microsemi
Microsemi
2N3762 Bipolar PNP Device Seme LAB
Seme LAB

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche