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Numéro de référence | IRFB7540PbF | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
GDS
TO-220AB
IRFB7540PbF
G
Gate
StrongIRFET™
IRFB7540PbF
IRFS7540PbF
IRFSL7540PbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
60V
4.2m
5.1m
110A
DD
S
G
D2Pak
IRFS7540PbF
D
Drain
S
GD
TO-262
IRFSL7540PbF
S
Source
Base part number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
Package Type
TO-220
TO-262
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFB7540PbF
IRFSL7540PbF
IRFS7540PbF
IRFS7540TRLPbF
14
ID = 65A
12
10
TJ = 125°C
8
6
4
TJ = 25°C
2
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1 www.irf.com © 2014 International Rectifier
120
100
80
60
40
20
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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November 6, 2014
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Pages | Pages 13 | ||
Télécharger | [ IRFB7540PbF ] |
No | Description détaillée | Fabricant |
IRFB7540PbF | Power MOSFET ( Transistor ) | International Rectifier |
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