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1EDN8511B fiches techniques PDF

Infineon - high speed Superjunction MOSFET

Numéro de référence 1EDN8511B
Description high speed Superjunction MOSFET
Fabricant Infineon 
Logo Infineon 





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1EDN8511B fiche technique
EiceDRIVER™
1EDN751x/1EDN851x
Features
Fast, Precise, Strong and Compatible
• 5 ns slew rate to support high speed Superjunction MOSFET (like CoolMos™ C7) or GaN devices
• 19 ns propagation delay precision for fast MOSFET and GaN switching
• 8 A sink and 4 A source driver capability enables fast switching for very high efficiency applications and
powers low ohmic MOSFET
• Industry standard packages and pinout ease system-design upgrades
The New Reference in Ruggedness
• 4.2 V and 8 V UVLO (Under Voltage Lock Out) options ensure instant MOSFET protection under abnormal
conditions
• -10 V input voltage capability delivers robustness and crucial safety margin when device is driven from pulse-
transformers
• 5 A reverse current robustness eliminates the need for output protection circuitry
Applications
• Server SMPS (Switch Mode Power Supplies)
• TeleCom SMPS
• DC-to-DC Converter
• Bricks
• Power Tools
• Industrial SMPS
• Motor Control
Example Topologies
• Synchronous Rectification
• Power Factor Correction PFC (DCM, CCM)
• LLC, ZVS in combination with pulse transformer for isolation
Description
The 1EDN7x/1EDN8x is an advanced single-channel driver. It is suited to drive logic and normal level MOSFETs
and supports OptiMOSTM, CoolMOSTM, Standard Level MOSFETs, Superjunction MOSFETs, as well as IGBTs and
GaN Power devices.
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/1EDN
Rev. 2.0
2016-10-28

PagesPages 28
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