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PDF CJLJF3117PB Data sheet ( Hoja de datos )
| Número de pieza | CJLJF3117PB | |
| Descripción | P-channel MOSFET and Schottky Barrier Diode | |
| Fabricantes | JCET | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CJLJF3117PB (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-U Power Management MOSFETs-Schottky
CJLJF3117PB P-channel MOSFET and Schottky Barrier Diode
V(BR)DSS/VR
-20V
RDS(on)MAX
100mΩ@-4.5V
135mΩ@-2.5V
ID/IO
-3.3A
250mΩ@-1.8V
20V / 0.5A
DFNWB2×2-6L-U
FEATURE
z Independent Pinout to Each Device to
Each Device to Ease Circuit Design
z High Current Schottky Diode
z Featuring a MOSFET and a
Schottky Barrier Diode
MARKING
APPLICATION
z Optimized for Portable Applications Like Cell Phones,
Digital Cameras,Media Players,etc
z DC-DC Buck Circuits
z Li-ion Battery Applications
z Color Display and Camera Flash Regulators
Equivalent Circuit
K GS
654
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
12
A
3
D
Symbol Para
meter
P-MOSFET
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Current
IDM* Pulse Drain Current
Schottky Barrier Diode
VRRM
Peak Repetitive Reverse Voltage
VR DC Blocking Voltage
IO Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
PD Power Dissipation
RθJA Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
www.cj-elec.com
1
Value
-20
±8
-3.3
-10
20
20
0.5
0.75
83.3
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
A-2,May,2015
1 page  
N3 N4
N1 N6
www.cj-elec.com
5
A-2,May,2015
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet CJLJF3117PB.PDF ] | |
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| CJLJF3117P | P-Channel MOSFET | JCET |
| CJLJF3117PB | P-channel MOSFET and Schottky Barrier Diode | JCET |
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