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Numéro de référence | CJCD2004 | ||
Description | Dual N-Channel MOSFET | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2004
V(BR)DSS
20V
Dual N-Channel MOSFET
RDS(on)MAX
10mΩ@10V
12mΩ @4.5V
13mΩ@3.8V
17mΩ@2.5V
ID
10A
DFNWB2X3-6L-C
DESCRIPTION
The CJCD2004 uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating:Pluse width limited by junction temperature.
Symbol
VDS
VGS
ID
IDM *
RθJA
Tj
Tstg
TL
Value
20
±12
10
40
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
C,May,2015
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Pages | Pages 5 | ||
Télécharger | [ CJCD2004 ] |
No | Description détaillée | Fabricant |
CJCD2004 | Dual N-Channel MOSFET | JCET |
CJCD2005 | Dual N-Channel MOSFET | JCET |
CJCD2007 | Dual N-Channel MOSFET | JCET |
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