DataSheetWiki


GW30NC120HD fiches techniques PDF

STMicroelectronics - STGW30NC120HD

Numéro de référence GW30NC120HD
Description STGW30NC120HD
Fabricant STMicroelectronics 
Logo STMicroelectronics 





1 Page

No Preview Available !





GW30NC120HD fiche technique
STGW30NC120HD
N-channel 1200V - 30A - TO-247
very fast PowerMESH™ IGBT
Features
Type
VCES
STGW30NC120HD 1200V
VCE(sat)
@25°C
< 2.75V
IC
@100°C
30A
Low on-losses
Low on-voltage drop (Vcesat)
High current capability
High input impedance (voltage driven)
Low gate charge
Ideal for soft switching application
Application
Induction heating
Description
Using the latest high voltage technology based on
its patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, with
outstanding performances. The suffix “H”
identifies a family optimized for high frequency
application in order to achieve very high switching
performances (reduced tfall) maintaining a low
voltage drop.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STGW30NC120HD
GW30NC120HD
Package
TO-247
Packaging
Tube
October 2007
Rev 9
1/13
www.st.com
13

PagesPages 13
Télécharger [ GW30NC120HD ]


Fiche technique recommandé

No Description détaillée Fabricant
GW30NC120HD STGW30NC120HD STMicroelectronics
STMicroelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche