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Número de pieza | TEA1610P | |
Descripción | Zero-voltage-switching resonant converter controller | |
Fabricantes | Philips | |
Logotipo | ||
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DATA SHEET
TEA1610P; TEA1610T
Zero-voltage-switching
resonant converter controller
Product specification
File under Integrated Circuits, IC11
2001 Apr 25
1 page Philips Semiconductors
Zero-voltage-switching
resonant converter controller
Product specification
TEA1610P; TEA1610T
FUNCTIONAL DESCRIPTION
Start-up
When the applied voltage at VDD reaches VDD(initial) (see
Fig.5), the low side power switch is turned-on while the
high side power switch remains in the non-conducting
state. This start-up output state guarantees the initial
charging of the bootstrap capacitor (Cboot) used for the
floating supply of the high side driver.
During start-up, the voltage on the frequency capacitor (Cf)
is zero and defines the start-up state. The output voltage
of the error amplifier is kept constant (typ. 2.5 V) and
switching starts at about 80% of the maximum frequency
at the moment pin VDD reaches the start level.
The start-up state is maintained until VDD reaches the start
level (13.5 V), the oscillator is activated and the converter
starts operating.
handbook, full pagewidth
VDD
0
GH - SH
0
GL
0
VDD(start)
VDD(initial)
Fig.5 Start-up.
t MGT998
2001 Apr 25
5
5 Page Philips Semiconductors
Zero-voltage-switching
resonant converter controller
Product specification
TEA1610P; TEA1610T
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCF(L)
VCF(H)
VCf(p-p)
tdt
CF trip level LOW
CF trip level HIGH
Cf voltage (peak-to-peak value)
dead time
DC level
DC level
Cf = 100 pF; IIFS = 0.5 mA;
IIRS = 50 µA
− 1.27 − V
− 3.0 − V
1.63 1.73 1.83 V
0.37 0.40 0.43 µs
Output drivers
IGH(source) high side output source current
IGH(sink)
high side output sink current
IGL(source)
IGL(sink)
VGH(H)
low side output source current
low side output sink current
high side output voltage HIGH
VGH(L)
high side output voltage LOW
VGL(H)
VGL(L)
Vd(boot)
low side output voltage HIGH
low side output voltage LOW
bootstrap diode voltage drop
VDD(F) = 13 V; VSH = 0; VGH = 0
VDD(F) = 13 V; VSH = 0;
VGH = 13 V
VGL = 0
VGL = 14 V
VDD(F) = 13 V; VSH = 0;
IGH = 10 mA
VDD(F) = 13 V; VSH = 0;
IGH = 10 mA
IGL = 10 mA
IGL = 10 mA
I = 5 mA
−135
−
−135
−
10.8
−
10.8
−
1.5
−180
300
−180
300
12
0.2
12
0.2
1.8
−225
−
−225
−
−
0.5
−
0.5
2.1
mA
mA
mA
mA
V
V
V
V
V
Shut-down input pin SD
ISD
VSD(th)
input current
threshold level
VSD = 2.33 V
0 0.2 0.5 µA
2.26 2.33 2.40 V
Error amplifier pins I+, I−, VCO
II(CM)
VI(CM)
VI(offset)
gm
Ao
GB
VVCO(max)
IVCO(max)
VVCO(start)
common mode input current
common mode input voltage
input offset voltage
transconductance
open loop gain
gain bandwidth product
maximum output voltage
maximum output current
output voltage during start-up
VI(CM) = 1 V
−
−
VI(CM) = 1 V; IVCO = −10 mA
−2
VI(CM) = 1 V; source only
−
RL = 10 kΩ to GND; VI(CM) = 1 V −
RL = 10 kΩ to GND; VI(CM) = 1 V −
operating; RL = 10 kΩ to GND 3.2
operating; VVCO = 1 V
−0.4
IVCO = 0.3 mA
2.30
−0.1
−
0
330
70
5
3.6
−0.5
2.50
−0.5
2.5
+2
−
−
−
4.0
−0.6
2.70
µA
V
mV
µA/mV
dB
MHz
V
mA
V
Notes
1. Supply current IDD will increase with increasing bridge frequency to drive the capacitive load of two MOSFETs.
Typical MOSFETs for the TEA1610 application are 8N50 (Philips type PHX80N50E, Qg(tot) = 55 nC typ.) and these
will increase the supply current at 150 kHz according to the following formula:
∆IDD = 2 × Qg(tot) × fbridge = 2 × 55 nC × 150 kHz = 16.5 mA.
2. The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF and the
charge/discharge currents ICF(ch) and ICF(dis).
2001 Apr 25
11
11 Page |
Páginas | Total 20 Páginas | |
PDF Descargar | [ Datasheet TEA1610P.PDF ] |
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