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PDF 2SA1012 Data sheet ( Hoja de datos )
| Número de pieza | 2SA1012 | |
| Descripción | PNP Silicon Epitaxial Planar Transistor | |
| Fabricantes | SEMTECH | |
| Logotipo |  |
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2SA1012
PNP Silicon Epitaxial Planar Transistor
for high current switching applications.
The transistor is subdivided into two group, O and
Y, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Tamb = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 1 A
at -VCE = 1 V, -IC = 3 A
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Collector Cutoff Current
at -VCB = 50 V
Emitter Cutoff Current
at -VEB = 5 V
Collector Emitter Saturation Voltage
at -IC = 3 A, -IB = 0.15 A
Base Emitter Saturation Voltage
at -IC = 3 A, -IB = 0.15 A
Transition Frequency
at -VCE = 4 V, -IC = 1 A
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
TO-220 Plastic Package
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Ts
Value
60
50
5
5
25
150
-55 to +150
Unit
V
V
V
A
W
OC
OC
Symbol Min.
O hFE
Y hFE
hFE
-V(BR)CEO
-ICBO
-IEBO
-VCE(sat)
-VBE(sat)
fT
Cob
70
120
30
50
-
-
-
-
-
-
Typ. Max.
- 140
- 240
--
--
-1
-1
- 0.4
- 1.2
60 -
170 -
Unit
-
-
-
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev: 01
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 2SA1012.PDF ] | |
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