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TC55B465J-10 fiches techniques PDF

Toshiba - SILICON GATE CMOS STATIC RAM

Numéro de référence TC55B465J-10
Description SILICON GATE CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC55B465J-10 fiche technique
TOSHIBA
1l:55~65P/J-I0/12
SILICON GATE BiCMOS
65,536 WORD x 4 BIT BiCMOS STATIC RAM
Description
The TC55B465P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 65,536 words by 4 bits and
operated from a single 5V supply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
The TC55B465P/J features low power dissipation when the device is deselected using chip enable (CE) and has an output
enable input (OE) for fast memory access.
The TC55B465P/J is suitable for use in high speed applications such as cache memory and high speed storage. All inputs and
outputs are TIL compatible.
The TC55B465P/J is available in a 300mil width, 28-pin DIP and SOJ suitable for high density surface assembly.
Features
Pin Connection (Top View)
• Fast access time
- TC55B465P/J-10 10ns (max.)
- TC55B465P/J-12 12ns (max.)
• Low power dissipation
- Operation:
- TC55B465P/J-10 140mA (max.)
- TC55B465P/J-12 140mA (max.)
- Standby:
15mA (max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Output buffer control: OE
• Package:
- TC55B465P: DIP28-P-300B
- TC55B465J: SOJ28-P-300A
TC55B465P
NC Vee
A1S A14
AS A13
A7 A9
A6 A10
AS All
A4 A12
A3 NC
A2 NC
At 1/01
AO 1102
CE 1103
at 1104
GND 'Nt
TC55B465J
NC Vee
A1S A14
AS A13
A7 A9
A6 A10
AS All
A4 A12
A3 NC
A2 NC
Al 1/01
AO 1/02
~ 1/03
OE 1/04
GND
WE
Pin Names
(DIP)
(SOJ)
AO - A15 Address Inputs
1/01 - 1/04 Data Inputs/Outputs
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
V DD
GND
Power (+5V)
Ground
NC No Connection
TOSHIBA AMERICA ELECTRDNIC CDMPONENTS, INC.
8-49

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