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TC55464AP-20 fiches techniques PDF

Toshiba - SILICON GATE CMOS STATIC RAM

Numéro de référence TC55464AP-20
Description SILICON GATE CMOS STATIC RAM
Fabricant Toshiba 
Logo Toshiba 





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TC55464AP-20 fiche technique
TOSHIBA
1l:55464lU?/AJ-15/20/25/35
SILICON GATE CMOS
65,536 WORD x 4 BIT CMOS STATIC RAM
Description
The TC55464AP/AJ is a 262,144 bit high speed CMOS static random access memory organized as 65,536 words by 4 bits and
operated from a single 5V supply. Toshiba's advanced CMOS technology and circuit design enable high speed operation.
The TC55464AP/AJ features low power dissipation when the device is deselected using chip enable (CE). Also, the device
power between memory accesses is reduced by an automatic power down circuit.
The TC55464AP/AJ is suitable for use in high speed applications such as cache memory and high speed storage. All inputs
and outputs are TIL compatible.
The TC55464AP/AJ is available in a 300mil width, 24-pin DIP and SOJ suitable for high density surface assembly.
Features
• Fast access time
- TC55464AP/AJ-15 15ns (max.)
- TC55464AP/AJ-20 20ns (max.)
- TC55464AP/AJ-25 25ns (max.)
- TC55464AP/AJ-35 35ns (max.)
• Low power dissipation
- Operation:
- TC55464AP/AJ-10 120mA (max.)
- TC55464AP/AJ-20 120mA (max.)
- TC55464AP/AJ-25 120mA (max.)
- TC55464AP/AJ-35 100mA (max.)
- Standby:
1mA(max.)
• Single 5V power supply: 5V±10%
• Fully static operation
• Inputs and outputs TIL compatible
• Package:
- TC55464AP: DIP24-P-300B
- TC55464AJ: SOJ24-P-300A
Pin Connection (Top View)
TCSS464AP
A8
A7
A6
AS
A4
A3
A2
Al
AO
A9
CE
GND
Voo
A1S
A14
A13
A12
A1l
Al0
1/01
1102
1103
1/04
WE.
(DI?)
TCS5464AJ
A8 Voo
A7 A1S
A6 A14
AS A13
A4 A12
All
A10
1/01
1/02
1/03
1104
WE
(SOJ)
Pin Names
AD -A15
1/01 - 1/04
CE
WE
Voo
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Power (+5V)
Ground
TOSHIBA AMERICA ELECTRONIC COMPONENTS. INC.
8-25

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