PDF TC55BS8215J-10 Data sheet ( Hoja de datos )

Número de pieza	TC55BS8215J-10
Descripción	128K x 8-Bit Synchronous Static RAM
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA 131,072 WORD x 8 BIT SYNCHRONOUS STATIC RAM with Input Registers and Output Registers 1l:55BS8125}10/12 PRELIMINARY Description The TC55BS8125J is a 1,048,576 bit synchronous static random access memory fabricated using BiCMOS technology and organized as 131,072 words by 8 bits. The TC55BS8125J is similar to the TC55BS8128J but has common data I/O lines and does not have the write-cycle pass-through feature. Designed for pipelined architectures, this device has internal input and output registers which latch on the positive edge of an external clock (ClK). All address, data, and control signals are latched. The setup and hold times for the inputs are 2ns and 1ns respectively. Synchronous SRAMs can lead to faster, more robust system operation by virtually eliminating the timing skew problems associated with conventional asynchronous SRAMs. For example, write operations are internally self-timed when initiated - eliminating the need for accurate write pulse generation and timing by the memory controller or microprocessor. For read cycles, data is available one clock cycle after the address is latched. All inputs and outputs are TIL compatible. The TC55BS8125J is available in a 36-pin, 400mil SOJ package suitable for high density assembly. Features • Fast cycle time - TC55BS8125J-10 10ns (max.) - TC55BS8125J-12 12ns (max.) • Fast clock access time - TC55BS8125J-10 5ns (max.) - TC55BS8125J-12 6ns (max.) • Input and output registers for synchronous operation • Single power supply: 5V±10% • Common data I/O • Package: JEDEC standard pinout - 36-pin, 400mil SOJ: SOJ36-P-400 Pin Names AO -A16 1/01 - 1/08 ClK CE WE OE V DD GND NC Address Inputs Data Input and Output Clock Input Chip Enable Input Write Enable Input Output Enable Input Power (+5V) Ground No Connection Pin Connection (Top View) TC55BS8125J NC A3 A2 Al AO CE 1/01 1/02 VOD GND 1/03 1/04 WE A16 A15 A14 A13 NC NC A4 AS A6 A7 OE 1/08 1/07 GND Voo 1/06 1105 CLK A8 A9 A10 All A12 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. C-7 1 page TC55BS8125J-10112 Timing Waveforms Read Cycle 1 (OE = VILJ Standby Static RAM Read Read Read Read Cycle 2 (CE = V1U Read tACK Output Disable Read Read PRELIMINARY tACK TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. C-11 5 Page

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Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
TC55BS8215J-10	128K x 8-Bit Synchronous Static RAM	Toshiba
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