DataSheetWiki


F6QG1G842P2KD fiches techniques PDF

TAIYO YUDEN - Band III -Rx

Numéro de référence F6QG1G842P2KD
Description Band III -Rx
Fabricant TAIYO YUDEN 
Logo TAIYO YUDEN 





1 Page

No Preview Available !





F6QG1G842P2KD fiche technique
Pb
Pb-free
*Pb Free part
Customer Name
System
Part Number
MSL1
Standard specification
Band III -Rx
F6QG1G842P2KD
TAIYO YUDEN Mobile Technology Co., Ltd.
DATE
June 21, 2011
Version 2.0b
Preliminary
Table 1 Filter1 Electrical Specification
Parameter
Condition
(MHz)
Specification
Unit
Min. Typ. Max.
Remarks
Insertion Loss(*1) 1805 1880 -
3.2 4.5 dB
Amplitude ripple
Input VSWR
Output VSWR
Attenuation
Amplitude balance
(|S21/S31|)
Phase balance
((S21-S31)+180)
1805 1880
1805 1880
1805 1880
10 1300
1300 1705
1705 1785
1920 1980
1980 3000
3000 5000
5000 6000
1805 1880
1805 1880
- 1.9 3.3
- 1.8 2.3
- 2.0 2.3
40 63
-
40 53
-
41 45
-
24 28
-
30 38
-
30 50
-
30 48
-
+0.8/-0
-1.3 +1.3
.5
dB
-
-
dB
dB
dB
dB
dB
dB
dB
dB
+12 +3/-3 -12 deg.
Operating temperature range
-30~ +85
oC
Input Impedance (Unbalanced)
50 ohm
Output Impedance
(Balanced / differential)
100//18nH
ohm
(*1) Specification of insertion loss includes loss that comes from the test board. (Value: 0.15dB)

PagesPages 8
Télécharger [ F6QG1G842P2KD ]


Fiche technique recommandé

No Description détaillée Fabricant
F6QG1G842P2KD Band III -Rx TAIYO YUDEN
TAIYO YUDEN

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche