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SemiSouth - Silicon Carbide Power Schottky Diode

Numéro de référence SDB05S120
Description Silicon Carbide Power Schottky Diode
Fabricant SemiSouth 
Logo SemiSouth 





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SDB05S120 fiche technique
Silicon Carbide Power Schottky Diode
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 175 °C Maximum Operating Temperature
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
Silicon Carbide
SDB05S120
Product Summary
VDC 1200
V
IF 5 A
Qc 20 nC
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
True 2 Lead DPAK (TO-252)
Internal Schematic
MAXIMUM RATINGS
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Symbol
VRRM
VDC
IF
IFRM
Non-Repetitive Forward Surge
Current
IFSM
Power Dissipation
PD
Operating and Storage Temperature Tj, Tstg
Conditions
Tj = 25 °C
TC < 160 °C
TC = 125 °C, D = 0.1
TC = 25 °C, tP = 10 ms
TC = 25 °C, tP = 10 us
TC = 25 °C
Value
1200
1200
5
30
26
100
115
-55 to +175
Unit
V
A
W
°C
SDB05S120 Rev 1.4
1/5
July 2011

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