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APTJC120AM25VCT1AG Datasheet دیتاشیت PDF دانلود

دیتاشیت - Microsemi - SiC Power Module

شماره قطعه APTJC120AM25VCT1AG
شرح مفصل SiC Power Module
تولید کننده Microsemi 
آرم Microsemi 


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APTJC120AM25VCT1AG شرح
APTJC120AM25VCT1AG
Phase leg
SiC Power Module
VDSX = 1200V
RDSon = 25 mΩ max @ Tj = 25 °C
ID = 50 A @ Tc = 50 °C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
SiC JFET, Normally off
(4* SJEC120R100 in parallel per switch)
Pins 7/8; 9/10; 11/12 must be shorted
together
SiC Schottky Diode
(3* SDC10S120 in parallel per switch)
- Zero reverse recovery
- Zero forward recovery
- Temperature-independent switching behavior
- Positive temperature coefficient on VF
Very low stray inductance
Internal RC decoupling snubber
High level of integration
AlN substrate for improved thermal performance
Internal thermistor for temperature monitoring
Semisouth driver board (SGDR2500P2) recommended for this
module)
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
Solderable terminals for both power and signal for easy PCB
mounting
Low profile
RoHS Compliant
All ratings @ Tj = 25 °C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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