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Numéro de référence | SDP30S120 | ||
Description | Silicon Carbide Power Schottky Diode | ||
Fabricant | SemiSouth | ||
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1 Page
Silicon Carbide Power Schottky Diode
Features:
- Positive Temperature Coefficient for Ease of Paralleling
- Temperature Independent Switching Behavior
- 175 °C Maximum Operating Temperature
- Zero Reverse Recovery Current
- Zero Forward Recovery Voltage
Silicon Carbide
SDP30S120
Product Summary
VDC 1200
V
IF 30 A
Qc 130 nC
K(3)
Applications:
- Solar Inverter
- SMPS
- Power Factor Correction
- Induction Heating
- UPS
- Motor Drive
2 Lead TO-247
MAXIMUM RATINGS
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current (1)
Symbol
VRRM
VDC
IF
Peak Repetitive Forward Current (1) IFRM
Conditions
Tj = 25 °C
TC = 145 °C
TC = 100 °C
TC = 125 °C, D = 0.1
Non-Repetitive Surge Forward
Current (1)
TC = 25 °C, tP = 10 ms
IFSM
TC = 25 °C, tP = 10 us
Power Dissipation (1)
PD TC = 25 °C
Operating and Storage Temperature Tj, Tstg
(1) Limited by maximum junction temperature, Tj,max
SDP30S120 Rev 3.0
1/5
K(1) A(2)
Internal Schematic
Value
1200
1200
30
46
120
110
700
313
-55 to +175
Unit
V
A
W
°C
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Pages | Pages 5 | ||
Télécharger | [ SDP30S120 ] |
No | Description détaillée | Fabricant |
SDP30S120 | Silicon Carbide Power Schottky Diode | SemiSouth |
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