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RHK005N03FRA fiches techniques PDF

ROHM Semiconductor - 4V Drive Nch MOS FET

Numéro de référence RHK005N03FRA
Description 4V Drive Nch MOS FET
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RHK005N03FRA fiche technique
Transistors
4V Drive Nch MOS FET
RHK005NN0033FRA
RHKR0H0K50N0053NF0R3A
AEC-Q101 Qualified
zStructure
Silicon N-channel MOS FET
zFeatures
1) Low On-resistance.
2) High speed switching.
zApplications
Switching
zPackaging specifications and hFE
Package
Type
Code
Basic ordering unit (pieces)
RRHHKK000055NN0033FRA
Taping
T146
3000
zExternal dimensions (Unit : mm)
SMT3
2.9
0.4
(3)
1.1
0.8
(1)Source
(2)Gate
(3)Drain
(2) (1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : KU
zInner circuit
(3)
(2) 2
1
1 ESD PROTECTION DIODE (1)
2 BODY DIODE
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
1 Pw10µs, Duty cycle1%
2 Each terminal mounted on a recommended land
Symbol
VDSS
VGSS
ID
IDP 1
PD 2
Tch
Tstg
Limits
30
±20
±500
±2.0
200
150
55 to +150
zThermal resistance
Parameter
Channel to ambient
Each terminal mounted on a recommended land
Symbol
Rth(ch-a)
Limits
625
Unit
V
V
mA
A
mW
°C
°C
Unit
°C/W
(1) Source
(2) Gate
(3) Drain
1/2

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