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PDF AG009DGQ3 Data sheet ( Hoja de datos )
| Número de pieza | AG009DGQ3 | |
| Descripción | Nch 40V 30A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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AG009DGQ3
3.3mm×3.3mm Package / Nch 40V 30A Power MOSFET
Datasheet
VDSS
RDS(on)(Max.)
ID
PD
40V
8.0mΩ
±30A
75W
lFeatures
1) Small high-powered package reduces
mounting area by 36% at a maximum
2) Realization of high mounting reliability
by original terminal and plating treatment
3) Assuring Tj=175℃
4) AEC-Q101 Qualified
lOutline
HSMT8AG
lInner circuit
lApplication
Switching
lPackaging specifications
Packing
Embossed
Tape
Reel size (mm)
330
Type Tape width (mm)
Basic ordering unit (pcs)
12
3000
Taping code
TB
Marking
009DG
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
VGS = 10V
Pulsed drain current
Gate - Source voltage
Avalanche current, single pulse
Avalanche energy, single pulse
Power dissipation
Junction temperature
Operating junction and storage temperature range
VDSS
ID*1
IDP*2
VGSS
IAS*3
EAS*3
PD*1
Tj
Tstg
40
±30
±60
±20
15
17
75
175
-55 to +175
V
A
A
V
A
mJ
W
℃
℃
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/11
- Rev.001
1 page  
AG009DGQ3
lElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Datasheet
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Junction Temperature
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
5/11
- Rev.001
5 Page 
AG009DGQ3
lDimensions
Datasheet
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/11
- Rev.001
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet AG009DGQ3.PDF ] | |
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