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Numéro de référence | P2610ASG | ||
Description | N-Channel Field Effect Transistor | ||
Fabricant | NIKO-SEM | ||
Logo | |||
NIKO-SEM
N-Channel Enhancement Mode
P2610ASG
Field Effect Transistor
TO-263
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100 26mΩ
ID
40A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate-Source Voltage
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
LIMITS
±20
40
31
120
54
145
89
57
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1limited by maximum junction temperature.
2limited by package.
SYMBOL
RθJC
RθJA
TYPICAL
MAXIMUM
1.4
50
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current1
Drain-Source On-State
Resistance1
Forward Transconductance1
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(ON)
RDS(ON)
gfs
STATIC
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
VDS = 80V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125 °C
VDS = 10V, VGS = 10V
VGS = 10V, ID = 27.5A
VDS = 10V, ID = 27.5A
LIMITS
UNIT
MIN TYP MAX
100
1.5 2.3
4
V
±250 nA
1
µA
10
120 A
22 26 mΩ
53 S
REV1.1
July-7-2010
1
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Pages | Pages 5 | ||
Télécharger | [ P2610ASG ] |
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