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P1010AT fiches techniques PDF

NIKO-SEM - N-Channel Field Effect Transistor

Numéro de référence P1010AT
Description N-Channel Field Effect Transistor
Fabricant NIKO-SEM 
Logo NIKO-SEM 





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P1010AT fiche technique
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
10.5mΩ
ID
69A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 ° C
TC = 100 ° C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 ° C
TC = 100 ° C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
100
±25
69
49
200
23
264
115
58
-55 to 175
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
1.3
50
UNITS
°C /W
ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
UNITS
MIN TYP MAX
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
IGSS
IDSS
VGS = 0V, ID = 250A
100
VDS = VGS, ID = 250A
2.5 3.5 4.5
VDS = 0V, VGS = ±25V
±100
VDS = 80V, VGS = 0V
1
VDS = 80V, VGS = 0V, TJ = 125 ° C
10
V
nA
A
REV 1.1
1
G-32-3

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