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PDF P1525ETFB Data sheet ( Hoja de datos )
| Número de pieza | P1525ETFB | |
| Descripción | N-Channel Field Effect Transistor | |
| Fabricantes | NIKO-SEM | |
| Logotipo |  |
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NIKO-SEM
N-Channel Enhancement Mode P1525ETFB
Field Effect Transistor
TO-220F
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ
ID
15A
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 1mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
1. GATE
2. DRAIN
3. SOURCE
LIMITS
250
±20
15
9.4
60
7.6
29
37
15
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATING
THERMAL RESISTANCE
SYMBOL
Junction-to-Case
RJC
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
LIMITS
MIN TYP MAX
UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS
VGS(th)
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
250
V
12 3
IGSS VDS = 0V, VGS = ±20V
±100 nA
VDS = 250V, VGS = 0V
IDSS
VDS = 200V, VGS = 0V, TJ = 125 °C
1
A
10
REV 1.0
1
F-34-5
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet P1525ETFB.PDF ] | |
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