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Numéro de référence | PB6C4JU | ||
Description | Dual N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
PB6C4JU
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
20V 19.5mΩ @VGS = 4.5V
ID
7A
TDFN 2X3-6
1,2:S1
3:G1
4:G2
5,6:S2
7:D1/D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA= 70 °C
ID
IDM
7
6
25
Avalanche Current
IAS 13
Avalanche Energy3
EAS 8.5
Power Dissipation
TA= 25 °C
TA= 70°C
PD
1.8
1.2
Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL MAXIMUM
Junction-to-Ambient2
RqJA
68
1Pulse width limited by maximum junction temperature.
2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,in a still air
environment with TA =25°C.
UNITS
°C / W
REV 1.0
1 2015/11/17
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Pages | Pages 8 | ||
Télécharger | [ PB6C4JU ] |
No | Description détaillée | Fabricant |
PB6C4JU | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
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