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Numéro de référence | P1525ETFB | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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P1525ETFB
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
250V
260mΩ @VGS = 10V
ID
15A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 250
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
15
9.4
60
Avalanche Current
IAS 7.6
Avalanche Energy
L = 1mH EAS 29
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
37
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
REV 1.0
1 2017/1/22
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Pages | Pages 8 | ||
Télécharger | [ P1525ETFB ] |
No | Description détaillée | Fabricant |
P1525ETFB | N-Channel Enhancement Mode MOSFET | UNIKC |
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