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P1060ETF fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P1060ETF
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P1060ETF fiche technique
P1060ETF / P1060ETFS
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
600V
0.77Ω @VGS = 10V
ID
10A
TO-220F
TO-220FS
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 600
Gate-Source Voltage
VGS ±30
Continuous Drain Current2
Pulsed Drain Current1,2
Avalanche Current3
TC= 25 °C
TC= 100 °C
ID
IDM
IAS
10
6
30
3.5
Avalanche Energy3
EAS 61
Power Dissipation
TC= 25 °C
TC= 100°C
PD
39
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed
3VDD = 100V , L = 10mH, starting TJ = 25˚C
SYMBOL
RqJA
RqJC
TYPICAL
MAXIMUM
62.5
3.2
UNITS
°C / W
REV 1.0
1 2015/9/25

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