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PDF P0908ATF Data sheet ( Hoja de datos )
| Número de pieza | P0908ATF | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | UNIKC | |
| Logotipo |  |
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P0908ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
80V 9mΩ @VGS = 10V
ID
43A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current2
Pulsed Drain Current1,2
TC = 25 °C
TC = 100 °C
ID
IDM
43
27
160
Avalanche Current
IAS 38
Avalanche Energy
L = 0.1mH
EAS
72
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
37
15
Operating Junction & Storage Temperature Range
Tj, Tstg
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
2Limited only by maximum temperature allowed.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
3.3
62.5
UNITS
°C / W
REV 1.0
1 2015/7/31
1 page  
P0908ATF
N-Channel Enhancement Mode MOSFET
*因各家封装模具不同而外观略有所差异，不影响电性及Layout。
REV 1.0
5
2015/7/31
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet P0908ATF.PDF ] | |
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