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UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P0806ATF
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P0806ATF fiche technique
P0806ATF
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8.5mΩ @VGS = 10V
ID
57A
TO-220F
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±25
Continuous Drain Current
TC = 25 °C
TC = 100 °C
ID
57
36
Pulsed Drain Current
IDM 220
Avalanche Current
IAS 64
Avalanche Energy
L = 0.1mH
EAS
202
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16

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