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Numéro de référence | P8010BT | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P8010BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
85mΩ @VGS = 10V
ID
17A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
17
10
35
Avalanche Current
Avalanche Energy2
IAS 13
EAS 8.5
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
54
21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj = 25 °C,L=0.1mH,VDD= 50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
2.3
°C / W
62.5
REV 1.0
1 2017/1/16
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Pages | Pages 8 | ||
Télécharger | [ P8010BT ] |
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