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P3710BT fiches techniques PDF

UNIKC - N-Channel Enhancement Mode MOSFET

Numéro de référence P3710BT
Description N-Channel Enhancement Mode MOSFET
Fabricant UNIKC 
Logo UNIKC 





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P3710BT fiche technique
P3710BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
100V
37mΩ @VGS = 10V
ID
31A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 100
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
31
20
75
Avalanche Current
Avalanche Energy2
IAS 16
EAS 128
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
78
21
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
1Pulse width limited by maximum junction temperature.
2Starting Tj = 25 °C,L= 1mH,VDD= 50V
SYMBOL
RqJC
TYPICAL
MAXIMUM UNITS
1.6 °C / W
REV 1.0
1 2017/1/16

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