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Numéro de référence | CJQ4559 | ||
Description | N-channel and P-channel MOSFETS | ||
Fabricant | JCET | ||
Logo | |||
-,$1*68 &+$1*-,$1* (/(&7521,&6 7(&+12/2*< &2 /7'
623 3ODVWLF(QFDSVXODWH 026)(76
&-4
V(BR)DSS
9
1 &KDQQHO 3 &KDQQHO 026)(7
RDS(on)MAX
ID
Pȍ#9
Pȍ#9
$
623
9
Pȍ#9
Pȍ#9
)($785(
z Surface Mount Package
z Super High Density Cell Design for
Extremely Low RDS(ON)
$
$33/,&$7,21
z CCFL Inverter
0$5.,1*
Equivalent Circuit
Q4559= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
$%62/87( 0$;,080 5$7,1*6 7D Я XQOHVV RWKHUZLVH QRWHG
3DUDPHWHU
1026)(7
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
3026)(7
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
7HPSHUDWXUH DQG 7KHUPDO 5HVLVWDQFH
Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
ZZZFMHOHFFRP
6\PERO
VDS
VGS
ID
IDM
IS
VDS
VGS
ID
IDM
IS
PD
RșJA
TJ
TSTG
TL
9DOXH
60
±20
4.
1
4.
-60
±20
-3
-1
-3
150
-55~+150
260
8QLW
V
V
A
A
A
V
V
A
A
A
W
Я/W
Я
Я
Я
$3Mar6
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Pages | Pages 6 | ||
Télécharger | [ CJQ4559 ] |
No | Description détaillée | Fabricant |
CJQ4559 | N-channel and P-channel MOSFETS | JCET |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |