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Numéro de référence | P2003BT | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
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1 Page
P2003BT
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 20mΩ @VGS = 10V
ID
39A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
39
25
120
Avalanche Current
IAS 21
Avalanche Energy
L = 0.1mH
EAS
22
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
50
20
Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Pulse width limited by maximum junction temperature.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
2.5
50
UNITS
°C / W
REV 1.0
1 2014/7/21
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Pages | Pages 5 | ||
Télécharger | [ P2003BT ] |
No | Description détaillée | Fabricant |
P2003BDG | N-Channel Enhancement Mode MOSFET | UNIKC |
P2003BE | N-Channel Enhancement Mode MOSFET | UNIKC |
P2003BEA | N-Channel Enhancement Mode MOSFET | UNIKC |
P2003BEAA | N-Channel Enhancement Mode MOSFET | UNIKC |
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