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Numéro de référence | P0806ATX | ||
Description | N-Channel Enhancement Mode MOSFET | ||
Fabricant | UNIKC | ||
Logo | |||
P0806ATX
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
60V 8mΩ @VGS = 10V
ID
110A
TO-220
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Gate-Source Voltage
VGS ±20
Continuous Drain Current1
Pulsed Drain Current2
TC = 25 °C
TC = 100 °C
ID
IDM
110
69
300
Avalanche Current
IAS 102
Avalanche Energy
L = 0.1mH
EAS
525
Power Dissipation
TC = 25 °C
TC = 100 °C
PD
166
66
Operating Junction & Storage Temperature Range
TJ, TSTG
-55 to 150
UNITS
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1Limited by maximum junction temperature.
2Limited by package.
SYMBOL
RqJC
RqJA
TYPICAL
MAXIMUM
0.75
62.5
UNITS
°C / W
Ver 1.0
1 2012/4/16
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Pages | Pages 5 | ||
Télécharger | [ P0806ATX ] |
No | Description détaillée | Fabricant |
P0806AT | N-Channel Enhancement Mode MOSFET | UNIKC |
P0806ATF | N-Channel Enhancement Mode MOSFET | UNIKC |
P0806ATX | N-Channel Enhancement Mode MOSFET | UNIKC |
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